A review of simulation methods in micro/nanoscale heat conduction

H Bao, J Chen, X Gu, B Cao - ES Energy & Environment, 2018 - espublisher.com
Significant progress has been made in the past two decades about the micro/nanoscale
heat conduction. Many computational methods have been developed to accommodate the …

Near-junction thermal managements of electronics

YC Hua, Y Shen, ZL Tang, DS Tang, X Ran… - Advances in Heat …, 2023 - Elsevier
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …

Thermal transport properties of GaN with biaxial strain and electron-phonon coupling

DS Tang, GZ Qin, M Hu, BY Cao - Journal of Applied Physics, 2020 - pubs.aip.org
Strain inevitably exists in practical GaN-based devices due to the mismatch of lattice
structure and thermal expansion brought by heteroepitaxial growth and band engineering …

Near-junction phonon thermal spreading in GaN HEMTs: A comparative study of simulation techniques by full-band phonon Monte Carlo method

Y Shen, HA Yang, BY Cao - International Journal of Heat and Mass …, 2023 - Elsevier
Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …

Thermal spreading resistance in ballistic-diffusive regime for GaN HEMTs

YC Hua, HL Li, BY Cao - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
To develop an efficient thermal design for gallium-nitride (GaN) high-electron-mobility
transistors (HEMTs) that usually hold a super-high-power density, it is essential to accurately …

Spectral thermal spreading resistance of wide-bandgap semiconductors in ballistic-diffusive regime

Y Shen, YC Hua, HL Li, SL Sobolev… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
To develop efficient thermal management strategies for wide-bandgap (WBG)
semiconductor devices, it is essential to have a clear understanding of the heat transport …

Analysis of the ultrafast transient heat transport in sub 7-nm SOI FinFETs technology nodes using phonon hydrodynamic equation

H Rezgui, F Nasri, ABH Ali… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
During the last ten years, the miniaturization of nanoscale field-effect transistors (FETs)
predicted by Moore's law has confronted an aggressive scaling down of the FET architecture …

Time-domain finite element analysis to nonlinear transient responses of generalized diffusion-thermoelasticity with variable thermal conductivity and diffusivity

C Li, H Guo, X Tian - International Journal of Mechanical Sciences, 2017 - Elsevier
Numerous experimental and theoretical studies indicate that thermal conductivity and
diffusivity in materials cannot be viewed as constants in practical analysis. This provides us …

Slip boundary conditions in ballistic–diffusive heat transport in nanostructures

YC Hua, BY Cao - Nanoscale and Microscale Thermophysical …, 2017 - Taylor & Francis
Ballistic–diffusive heat conduction, which is predominantly affected by boundaries and
interfaces, will occur in nanostructures whose characteristic lengths are comparable to the …

Reactive force field simulation on thermal conductivities of carbon nanotubes and graphene

C Diao, Y Dong, J Lin - International Journal of Heat and Mass Transfer, 2017 - Elsevier
Carbon nanotubes (CNTs) and graphene are thought to be building bricks for next-
generation thermal management devices due to their ultra-high thermal conductivities …