High mobility crystallized stacked-channel thin-film transistors induced by low-temperature thermal annealing
P Wen, C Peng, X Ding, FH Chen, G Yan, L Xu… - Applied Physics …, 2025 - pubs.aip.org
A high mobility crystallized stacked-channel thin-film transistor (TFT) was fabricated and
characterized. The stacked IGO/IGZO channel film consisting of an In-rich IGO layer and a …
characterized. The stacked IGO/IGZO channel film consisting of an In-rich IGO layer and a …
Low Temperature Crystallization of Amorphous InGaO by Ar Plasma Treatment for Thin Film Transistors
We investigated the effect of Ar plasma treatment on the crystallization of indium-gallium-
oxide (IGO) thin films. Ar plasma treatment accelerates the crystallization of amorphous IGO …
oxide (IGO) thin films. Ar plasma treatment accelerates the crystallization of amorphous IGO …
One Micrometer Channel Length, Coplanar Polycrystalline InGaO Thin Film Transistors Exhibiting 85 cm2 V−1 s−1 Mobility and Excellent Bias Stabilities by Using …
The effect of N+ resistivity in the offset region, for≈ 1 µm channel length coplanar,
polycrystalline InGaO (PC‐IGO) thin‐film transistors (TFTs) is studied. The room temperature …
polycrystalline InGaO (PC‐IGO) thin‐film transistors (TFTs) is studied. The room temperature …
A Coplanar Crystalline InGaO Thin Film Transistor with SiO2 Gate Insulator on ZrO2 Ferroelectric Layer: A New Ferroelectric TFT Structure
Ferroelectric transistors with a large memory window (MW) and operational stability have
been of increasing interest recently. In this study, a ferroelectric thin‐film transistor (FE‐TFT) …
been of increasing interest recently. In this study, a ferroelectric thin‐film transistor (FE‐TFT) …