The investigation of plasma channels induced by focused ultra-short 1030-nm laser pulses
in bulk of synthetic High Pressure High Temperature (HPHT) diamond revealed strong …

The absorption of light in the near-infrared region of the electromagnetic spectrum by Au-
hyperdoped Si has been observed. While silicon photodetectors in this range are currently …

In this work, the Ag-SiO2-Ag metamaterial with elliptical nano-slits was proposed to
investigate the multi-band polarization-dependent perfect absorber. It was found that multi …

Spectral range of crystalline silicon absorption could be extended to near-and even mid-
infrared region by its hyperdo** via ion-implantation technology, requiring the following …

A novel double-impurity do** process for silicon (Si) surfaces was developed, utilizing
nanosecond-laser melting of an 11 nm thick gold (Au) top film and a Si wafer substrate in a …

Experimental results on the observation of terahertz luminescence under optical excitation of
silicon doped with neutral helium-like magnesium donors under photoionization conditions …

The absorption of light in the near-infrared region of the electromagnetic spectrum by
Auhyperdoped Si has been observed. While silicon photodetectors in this range are …

The investigation of plasma channels induced by focused ultra-short 1030-nm laser pulses
in bulk of synthetic High Pressure High Temperature (HPHT) diamond revealed strong …

Silicon's band gap (1.12~eV) limits its near-infrared photon absorption. Silicon hyperdo**
creates energy states within the band gap, enabling near-infrared radiation absorption. Ion …

Nanosecond laser hyperdo** of Si wafer surfaces through laser melting and diffusion of
gold from its surface 20-nm and 50-nm films into bulk silicon was studied by X-ray …