This paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor
(MOS) applications in recent years. According to the analyses of the physical and chemical …

Density functional theory calculations (DFT) are used to investigate the strain-induced
changes to the electronic structure of biaxially strained (parallel to the (001),(110) and (111) …

Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic
devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al …

A study into the optimal deposition temperature for ultra-thin La 2 O 3/Ge and Y 2 O 3/Ge
gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for …

We compared the electrical properties of HfO 2, HfO 2/La 2 O 3, and La-doped HfO 2 gate
insulators deposited on Ge substrate using an atomic layer deposition (ALD) process …

Density functional theory calculations are used to investigate the formation and diffusion of
tin-vacancy pairs (SnV) in germanium (Ge). Depending upon the Fermi energy, SnV pairs …

The hexagonal phase of La 2 O 3 is obtained upon vacuum annealing of hydroxilated La 2
O 3 films grown with atomic layer deposition at 200 C using La (P i rCp) 3 and O 3⁠. A …

Here we report a facile synthesis of GeO x islands on Ge substrates, having a unique shell-
shaped microstructure, and investigate its optoelectronic properties. In this study, Ge …

In recent years germanium has been emerging as a mainstream material that could have
important applications in the microelectronics industry. The principle aim of this study is to …

The influence of different thermal oxidation/nitridation durations (5, 10, 15, and 20 minutes)
at 400° C for transforming metallic Ho sputtered on Ge substrate in N2O gas ambient have …