We review the field of solid-phase epitaxy (SPE), a crystallization process during which
atoms undergo bonding rearrangements that allow them to transfer from a metastable …

The kinetics of dopant-enhanced solid phase epitaxy (SPE) are studied in amorphous
silicon (a-Si) and germanium (a-Ge) layers formed by ion implantation. Implanted Sb …

The redistribution of fluorine during solid phase epitaxial regrowth (SPER) of preamorphized
Si has been experimentally investigated, explained, and simulated, for different F …

We investigate the solid phase epitaxial regrowth (SPER) dynamics of phosphorus doped
Si: C by time resolved reflectivity and high resolution x-ray diffraction. The effect of SPER …

Studies into the effect of hydrogen on the kinetics of solid phase epitaxy (SPE) in amorphous
Si (a-Si) and Ge (a-Ge) are presented. During SPE, H diffuses into surface amorphous …

Atom redistribution during crystallization of a B and P co-doped amorphous Si layer
produced by Si and P chemical vapor co-deposition and B implantation has been …

A nano-sized ion beam apparatus has been used as maskless lithography to implant 20 keV
Ga+ ions into a 26 nm thick silicon crystalline film on insulator. The ion beam, with about 5 …

Complementary metal oxide semiconductor (CMOS) device scaling involves many
technologicalchallenges in terms of junction formation. Solid phase epitaxial regrowth …

Abstract Multidirectional SPEG (Solid Phase Epitaxial Growth) of silicon has been
investigated in micro and nanoamorphous structures generated on a crystalline substrate by …

The junction fabrication involve numerous technological challenges as the devices shrink.
To alleviate issues brought by the aggressive device scaling, Fully Depleted SOI substrates …