A review on III–V core–multishell nanowires: growth, properties, and applications
This review focuses on the emerging field of core–multishell (CMS) semiconductor
nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a …
nanowires (NWs). In these kinds of wires, a NW grown vertically on a substrate acts as a …
Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
Modulation do** of GaAs/AlGaAs core–shell nanowires with effective defect passivation and high electron mobility
Reliable do** is required to realize many devices based on semiconductor nanowires.
Group III–V nanowires show great promise as elements of high-speed optoelectronic …
Group III–V nanowires show great promise as elements of high-speed optoelectronic …
Electron mobilities approaching bulk limits in “surface-free” GaAs nanowires
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major
challenge facing the development of nanowire-based electronic devices. Here we …
challenge facing the development of nanowire-based electronic devices. Here we …
Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core–shell nanowire transistors
S Morkötter, N Jeon, D Rudolph, B Loitsch… - Nano …, 2015 - ACS Publications
Strong surface and impurity scattering in III–V semiconductor-based nanowires (NW)
degrade the performance of electronic devices, requiring refined concepts for controlling …
degrade the performance of electronic devices, requiring refined concepts for controlling …
Increased photoconductivity lifetime in GaAs nanowires by controlled n-type and p-type do**
Controlled do** of GaAs nanowires is crucial for the development of nanowire-based
electronic and optoelectronic devices. Here, we present a noncontact method based on time …
electronic and optoelectronic devices. Here, we present a noncontact method based on time …
Tuning Rashba spin-orbit coupling in homogeneous semiconductor nanowires
We use k· p theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor
nanowires. We specifically investigate GaAs-and InSb-based devices with different gate …
nanowires. We specifically investigate GaAs-and InSb-based devices with different gate …
Insulated interlayer for efficient and photostable electron-transport-layer-free perovskite solar cells
Currently, the most efficient perovskite solar cells (PSCs) mainly use planar and
mesoporous titanium dioxide (TiO2) as an electron-transport layer (ETL). However, because …
mesoporous titanium dioxide (TiO2) as an electron-transport layer (ETL). However, because …
Emergence of localized states in narrow GaAs/AlGaAs nanowire quantum well tubes
We use low-temperature photoluminescence, photoluminescence excitation, and
photoluminescence imaging spectroscopy to explore the optical and electronic properties of …
photoluminescence imaging spectroscopy to explore the optical and electronic properties of …
Breakdown of corner states and carrier localization by monolayer fluctuations in radial nanowire quantum wells
MM Sonner, A Sitek, L Janker, D Rudolph… - Nano Letters, 2019 - ACS Publications
We report a comprehensive study of the impact of the structural properties in radial GaAs-
Al0. 3Ga0. 7As nanowire-quantum well heterostructures on the optical recombination …
Al0. 3Ga0. 7As nanowire-quantum well heterostructures on the optical recombination …