Design and analysis of III-V two-dimensional van der Waals heterostructures for ultra-thin solar cells

Y Chen, B Jia, X Guan, L Han, L Wu, P Guan… - Applied Surface Science, 2022 - Elsevier
Van der Waals (vdW) heterostructures consist of six group III-V monolayers MX (M= Ga, In,
X= P, As, Sb) have been systematically investigated via hybrid functional HSE06 based on …

Advances in 2D Materials Based Gas Sensors for Industrial Machine Olfactory Applications

P Wu, Y Li, A Yang, X Tan, J Chu, Y Zhang, Y Yan… - ACS …, 2024 - ACS Publications
The escalating development and improvement of gas sensing ability in industrial equipment,
or “machine olfactory”, propels the evolution of gas sensors toward enhanced sensitivity …

Electronic and optical properties of two-dimensional heterostructures based on Janus XSSe (X= Mo, W) and Mg (OH) 2: A first principles investigation

J Lou, K Ren, Z Huang, W Huo, Z Zhu, J Yu - RSC advances, 2021 - pubs.rsc.org
Two-dimensional (2D) materials have attracted numerous investigations after the discovery
of graphene. 2D van der Waals (vdW) heterostructures are a new generation of layered …

Growth of highly conductive Al-rich AlGaN: Si with low group-III vacancy concentration

AS Almogbel, CJ Zollner, BK Saifaddin, M Iza, J Wang… - AIP Advances, 2021 - pubs.aip.org
The impact of AlGaN growth conditions on AlGaN: Si resistivity and surface morphology has
been investigated using metalorganic chemical vapor deposition. Growth parameters …

[HTML][HTML] Effect of do** of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability

A Lachowski, E Grzanka, R Czernecki… - Materials Science in …, 2023 - Elsevier
Abstract GaN/InGaN quantum wells (QWs), widely used as the active region in blue and
green light emitters, are susceptible to structural degradation at temperatures above 900° C …

Construction of group III nitride van der Waals heterostructures for highly efficient photocatalyst

Y Chen, X Guan, L Yang, B Jia, H Zhao, L Han… - Applied Surface …, 2023 - Elsevier
Photocatalytic water splitting is an effective way to solve the energy crisis and environmental
problems. Here, we propose a series of heterostructures constructed by two-dimensional …

Native and radiation induced point defects in AlN and Sc-doped AlN

Y Osetsky, MH Du, G Samolyuk, SJ Zinkle… - Physical Review …, 2022 - APS
We have performed first-principles calculations to investigate the electronic structure,
configurations, formation, and binding energies of native and radiation induced point defects …

Computational study of native defects and defect migration in wurtzite AlN: an atomistic approach

L Zhu, CRA Catlow, Q Hou, X Zhang… - Journal of Materials …, 2023 - pubs.rsc.org
We derive an empirical, lattice energy consistent interatomic force field model for wurtzite
AlN to predict consistently a wide range of physical and defect properties. Using Mott …

Role of metal vacancies in the mechanism of thermal degradation of InGaN quantum wells

J Smalc-Koziorowska, E Grzanka… - … Applied Materials & …, 2021 - ACS Publications
In this work, we study the thermal degradation of In-rich In x Ga1–x N quantum wells (QWs)
and propose explanation of its origin based on the diffusion of metal vacancies. The …

Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis

Y Yang, Z Shi, S Zhang, X Ma, J Bai… - The Journal of …, 2023 - ACS Publications
Insightful understanding of defect properties and prevention of defect damage are among
the biggest issues in the development of photoelectronic devices based on wide-gap III …