Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
GaAsBi: from molecular beam epitaxy growth to devices
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
GaAs(1-x)Bix: A Promising Material for Optoelectronics Applications
KK Nagaraja, YA Mityagin, MP Telenkov… - Critical Reviews in …, 2017 - Taylor & Francis
Bismuth alloying with GaAs has promised greater advantages in the realization of more
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
convenient mid and near IR photonic devices owing to its novel and unique properties. The …
Bismuth-containing semiconductors GaAs1− xBix for energy conversion: Thermoelectric properties
AH Reshak - Materials Science in Semiconductor Processing, 2022 - Elsevier
The electronic transport properties of GaAs 1− x Bi x alloys, are obtained using the semi-
classical Boltzmann theory as incorporated in BoltzTraP code. The thermoelectric properties …
classical Boltzmann theory as incorporated in BoltzTraP code. The thermoelectric properties …
Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys
Abstract Bulk GaAs 1-x Bi x/GaAs alloys with various bismuth compositions are studied
using power-and temperature-dependent photoluminescence (PL), Raman scattering, and …
using power-and temperature-dependent photoluminescence (PL), Raman scattering, and …
Theoretical study of optoelectronic properties of GaAs1− xBix alloys using valence band anticrossing model
Abstract The (12× 12) and (14× 14) valence band anticrossing (V-BAC) models were
applied to calculate the electronic band structure of GaAs 1− x Bi x dilute alloys along Δ-, Λ …
applied to calculate the electronic band structure of GaAs 1− x Bi x dilute alloys along Δ-, Λ …
Electron spin dynamics and g-factor in GaAsBi
Electron spin dynamics in elastically strained bulk GaAsBi epilayer with 2.2% Bi
concentration has been measured by time resolved photoluminescence spectroscopy …
concentration has been measured by time resolved photoluminescence spectroscopy …
Anisotropic electron factor as a probe of the electronic structure of epilayers
The electron Landé g factor (g*) is investigated both experimentally and theoretically in a
series of GaBi x As 1− x/GaAs strained epitaxial layers, for bismuth compositions up to x …
series of GaBi x As 1− x/GaAs strained epitaxial layers, for bismuth compositions up to x …
Calculation of band structure and optical gain of type-II GaSbBi/GaAs quantum wells using 14-band k· p Hamiltonian
The electronic band structure of strained GaSbBi/GaAs heterostructures are investigated
using a 14 band k· p Hamiltonian which is an extended form of the 12 band Valance band …
using a 14 band k· p Hamiltonian which is an extended form of the 12 band Valance band …
GaAs1− y− zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs
The growth and properties of alloys in the alternative quaternary alloy system GaAs 1− y− z
P y Bi z were explored. This materials system allows simultaneous and independent tuning …
P y Bi z were explored. This materials system allows simultaneous and independent tuning …
Optical and spin properties of localized and free excitons in GaBixAs1− x/GaAs multiple quantum wells
Raman spectroscopy and magneto-photoluminescence measurements under high magnetic
fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple …
fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple …