Progress in the developments of (Ba, Sr) TiO3 (BST) thin films for Gigabit era DRAMs
S Ezhilvalavan, TY Tseng - Materials Chemistry and Physics, 2000 - Elsevier
This paper reviews the recent developments of (Ba, Sr) TiO3 (BST) thin films for future Gbit
era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors …
era dynamic random access memory (DRAM) applications. The trends of DRAM capacitors …
Leakage currents in thin films for ultrahigh-density dynamic random access memories
GW Dietz, M Schumacher, R Waser… - Journal of applied …, 1997 - pubs.aip.org
(Ba, Sr) TiO 3 (BST) thin films grown by chemical vapor deposition and with platinum (Pt) top
and bottom electrodes have been characterized with respect to the leakage current as a …
and bottom electrodes have been characterized with respect to the leakage current as a …
Electrode influence on the charge transport through SrTiO3 thin films
GW Dietz, W Antpöhler, M Klee, R Waser - Journal of applied physics, 1995 - pubs.aip.org
The influence of the electrodes on the dielectric behavior and especially on the leakage
behavior of SrTiOs thin films was investigated by impedance analysis. Based on …
behavior of SrTiOs thin films was investigated by impedance analysis. Based on …
Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a‐SrTiO3) Memristors
Memristive devices are the precursors to high density nanoscale memories and the building
blocks for neuromorphic computing. In this work, a unique room temperature synthesized …
blocks for neuromorphic computing. In this work, a unique room temperature synthesized …
Field-induced resistive switching based on space-charge-limited current
Y **a, W He, L Chen, X Meng, Z Liu - Applied physics letters, 2007 - pubs.aip.org
Polycrystalline (Ba, Sr)(Zr, Ti) O 3 thin films sandwiched between two Pt electrodes have
been revealed to exhibit hysteretic current-voltage (IV) characteristics and resistive switching …
been revealed to exhibit hysteretic current-voltage (IV) characteristics and resistive switching …
Band-gap energies of sol-gel-derived SrTiO3 thin films
D Bao, X Yao, N Wakiya, K Shinozaki… - Applied Physics …, 2001 - pubs.aip.org
Band-gap energies of sol-gel-derived SrTiO3 thin films were studied in terms of annealing
temperature and film thickness. The band-gap energies of highly crystallized films were …
temperature and film thickness. The band-gap energies of highly crystallized films were …
High dielectric constant and tunability of epitaxial thin film capacitors
The dielectric and insulating properties of epitaxial SrTiO 3 (STO) thin film capacitors were
studied. The films were grown by inverted cylindrical magnetron sputtering in the radio …
studied. The films were grown by inverted cylindrical magnetron sputtering in the radio …
Optical and electronic functionality arising from controlled defect formation in nanoscale complex oxide lateral epitaxy
Epitaxial crystallization of complex oxides provides the means to create materials with
precisely selected composition, strain, and orientation, thereby controlling their …
precisely selected composition, strain, and orientation, thereby controlling their …
Microstructural and interface properties of Au/SrTiO3 (STO)/n-GaN heterojunction with an e-beam evaporated high-k STO interlayer
This paper reviews the microstructural and electrical properties of Au/n-GaN
metal/semiconductor (MS) diode with an e-beam evaporated SrTiO 3 (STO) as an insulating …
metal/semiconductor (MS) diode with an e-beam evaporated SrTiO 3 (STO) as an insulating …
High dielectric constant of SrTiO3 thin films prepared by chemical process
SrTiO 3 thin films were prepared by the polymeric precursor method and deposited by spin-
coating onto Pt/Ti/SiO 2/Si (100) substrates. The spin-coated films heat treated at 700° C …
coating onto Pt/Ti/SiO 2/Si (100) substrates. The spin-coated films heat treated at 700° C …