Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …

Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet
photonics, where an understanding of its thermal properties is essential. Here, we measure …

In evaluating GaN high-electron mobility transistors (HEMTs) for high-power applications, it
is crucial to consider the device-level breakdown characteristics. This letter replaces the …

Due to its high breakdown electric field, the ultra-wide bandgap semiconductor AlGaN has
garnered much attention recently as a promising channel material for next-generation high …

We have successfully grown AlGaN/GaN high electron mobility transistor (HEMT) structure
on the high-quality undoped thick AlN buffer layer with large band offset to replace the …

The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power
devices due to its thin top barrier, tight carrier confinement, and improved breakdown …

This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on
bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown …

To enhance the electron mobility in quantum-well high-electron-mobility transistors (QW
HEMTs), we investigate the transport properties in AlN/GaN/AlN heterostructures on Al-polar …

This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on
sapphire substrates by metal organic chemical vapor deposition. The device structure …

Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray
optical disks. A major limitation for further adoption of GaN in power electronics is its low …