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[HTML][HTML] A Review on the Fundamental Properties of Sb2Se3-Based Thin Film Solar Cells
There has been a recent surge in interest toward thin film-based solar cells, specifically new
absorber materials composed by Earth-abundant and non-toxic elements. Among these …
absorber materials composed by Earth-abundant and non-toxic elements. Among these …
Development of in situ characterization techniques in molecular beam epitaxy
C Shen, W Zhan, M Li, Z Sun, J Tang… - Journal of …, 2024 - iopscience.iop.org
Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent
limitations, such as being prone to sample contamination and unstable surfaces during …
limitations, such as being prone to sample contamination and unstable surfaces during …
Impact of 1 MeV proton irradiation on InGaAsN solar cells
M Levillayer, S Duzellier, I Massiot… - Semiconductor …, 2022 - iopscience.iop.org
The impact of 1 MeV proton irradiation on 1.12 eV bandgap InGaAsN solar cells was studied
through device and material characterizations. After a 10 13 p+ cm− 2 proton fluence, the …
through device and material characterizations. After a 10 13 p+ cm− 2 proton fluence, the …
Do** of dilute nitride compounds grown by liquid phase epitaxy
M Milanova, S Georgiev… - Journal of Physics …, 2023 - iopscience.iop.org
The do** of dilute nitrides is an important point of the growth and processing technology
for different optoelectronic devices based on these compounds. In this paper, both …
for different optoelectronic devices based on these compounds. In this paper, both …
Controlling growth rate and band-gap by combining in situ measurements and reflectance model for molecular beam epitaxy fabrication
P Gadras, L Boudier, L Bourdon, A Fées… - PV School 2024 …, 2024 - cnrs.hal.science
The in situ and real-time measurement of the semiconductor materials growth rates and
bandgaps is a key element to better control the epitaxy of high efficiency solar cells, and …
bandgaps is a key element to better control the epitaxy of high efficiency solar cells, and …
Comparison between various structures of dilute-nitride InGaAsN quantum well lasers in terms of their main electronic properties
A Drăgulinescu, M Dumitrescu - Advanced Topics in …, 2023 - spiedigitallibrary.org
In the last two decades, quantum well (QW) lasers have been used for a wide range of
applications at wavelengths spanning on a very large domain and based on various …
applications at wavelengths spanning on a very large domain and based on various …
[HTML][HTML] Особенности импульсного лазерного напыления тонких пленок InGaAsN в атмосфере активного фонового газа
ОВ Девицкий - Научно-технический вестник информационных …, 2022 - cyberleninka.ru
Предмет исследования. Соединения III-VN являются перспективным классом твердых
растворов, которые могут активно использоваться в оптоэлектронных приборах …
растворов, которые могут активно использоваться в оптоэлектронных приборах …