This paper gives an assessment of old and new data relevant to the optical and electrical
performance of PureB photodiodes for application in the wavelength range 2 nm to 400 nm …

A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength
range has been fabricated on Si using pure boron chemical vapor deposition to create both …

A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at
250° C by chemical vapor deposition (CVD), forming junctions with low saturation current …

Silicon photodiodes for use as low-energy electron detectors have been fabricated using a
pure-boron technology to form the p+-anode region. The diode I–V characteristics are ideal …

Surface reaction mechanisms are investigated to determine the activation energies of pure
boron (PureB) layer deposition at temperatures from 350 C to 850 C when using chemical …

In this study, the authors investigated atomic layer deposition (ALD) of B 2 O 3 and BN for
conformal, ultrashallow B do** applications and compared the effect of dopant-containing …

The conductance along the interface between an as-deposited pure boron layer and n-type
Si, fabricated at 400° C, is found to be reliably formed with high-ohmic sheet resistance …

Pure boron (PureB) chemical-vapor deposition performed at 400° C is applied as a
postmetalization process module to fabricate near-ideal p+ n photodiodes with nm-thin …

The electrical and optical performance of silicon pure-boron (Pure-B) diode is investigated in
relationship to the thermal processing used after formation of the PureB chemical-vapor …

Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO 2
surfaces has been investigated. It has been shown that there is a large difference between …