We report on the transport properties of lithium ion conducting glass ceramics represented
by the general composition Li1+ x–y Al x 3+ M y 5+ M2–x–y 4+(PO4) 3 with NASICON-type …

Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …

Germanium nanowires (GeNWs) with p-and n-dopants were synthesized by chemical vapor
deposition (CVD) and were used to construct complementary field-effect transistors (FETs) …

A wet chemical preparation involving de-ionized water, hydrogen peroxide, and hydrofluoric
acid is used to passivate germanium (Ge)(100) surfaces. Infrared absorption spectroscopy …

Abstract Germanium (Ge)‐based nanostructures, especially those with germanium dioxide
(GeO2), have drawn great interest for applications in lithium (Li)‐ion batteries due to their …

Though many studies examined the properties of the class of IIIA–VIA and IVA–VIA layered
materials, few have delved into the electrochemical aspect of such materials. In light of the …

Chalcogenide materials have promising physical and electrical characteristics for use in
advanced memory and electronic synaptic devices. However, limited research has been …

The exposure of Ge (001) substrates to atomic oxygen was studied in situ to establish the
stability of the germanium oxide. After preparing chemically clean and atomically flat Ge …

Recently, the rapid and significant progress in the development of various stretchable
electronics has triggered intense research interest. Although the remarkable features of …

Good quality and perfectly stoichiometric Ge O 2 layers are promising interlayers to be
implemented in alternative devices based on high dielectric constant oxide/Ge (100). In this …