Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities
Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …
and energy-related technologies, on the basis of their intriguing properties including …
Design and exploration of semiconductors from first principles: A review of recent advances
Recent first-principles approaches to semiconductors are reviewed, with an emphasis on
theoretical insight into emerging materials and in silico exploration of as-yet-unreported …
theoretical insight into emerging materials and in silico exploration of as-yet-unreported …
Lone-pair effect on carrier capture in Cu 2 ZnSnS 4 solar cells
The performance of kesterite thin-film solar cells is limited by a low open-circuit voltage due
to defect-mediated electron–hole recombination. We calculate the non-radiative carrier …
to defect-mediated electron–hole recombination. We calculate the non-radiative carrier …
Defects in amorphous semiconductors: The case of amorphous indium gallium zinc oxide
Based on a rational classification of defects in amorphous materials, we propose a simplified
model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium …
model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium …
Combination of gate-stack process and cationic composition control for boosting the performance of thin-film transistors using In–Ga–Zn–O active channels prepared …
SH Moon, SH Bae, YH Kwon, NJ Seong… - ACS Applied …, 2021 - ACS Publications
Combination impacts of controlling the gate-stack process conditions and the indium
contents of In–Ga–Zn–O (IGZO) channels prepared by atomic layer deposition (ALD) were …
contents of In–Ga–Zn–O (IGZO) channels prepared by atomic layer deposition (ALD) were …
Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition
SB Ko, NJ Seong, K Choi, SJ Yoon, SN Choi… - Journal of Materials …, 2019 - pubs.rsc.org
Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic
layer deposition (ALD) were strategically investigated for thin film transistor applications. The …
layer deposition (ALD) were strategically investigated for thin film transistor applications. The …
Cation composition-dependent device performance and positive bias instability of self-aligned oxide semiconductor thin-film transistors: Including oxygen and …
JT Jang, D Kim, JH Baeck, JU Bae, J Noh… - … Applied Materials & …, 2022 - ACS Publications
Amorphous oxide semiconductor transistors control the illuminance of pixels in an
ecosystem of displays from large-screen TVs to wearable devices. To satisfy application …
ecosystem of displays from large-screen TVs to wearable devices. To satisfy application …
Organic materials as a passivation layer for metal oxide semiconductors
Metal oxide semiconductors have gained much interest in the field of next generation
consumer electronics due to the worldwide development of flexible electronic devices and …
consumer electronics due to the worldwide development of flexible electronic devices and …
Evolution of defect structures and deep subgap states during annealing of amorphous In-Ga-Zn oxide for thin-film transistors
We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn
oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray …
oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray …
High-performance top-gated and double-gated oxide–semiconductor ferroelectric field-effect transistor enabled by channel defect self-compensation effect
In this article, we demonstrate a low-thermal budget defect-engineered process to achieve
top-gated (TG) oxide–semiconductor ferroelectric field-effect transistors (FeFETs). The …
top-gated (TG) oxide–semiconductor ferroelectric field-effect transistors (FeFETs). The …