This article explores the electrical performance of capacitive memory and resistive switching
(RS) devices based on thin films of a single active layer of Silicon oxide (SiO x). The …

Abstract Metal–semiconductor-metal (MSM) infrared photodetector-based Ag/CuO NW/Ag
was fabricated using glancing angle deposition technique integrated RF sputtering machine …

Abstract Undoped TiO 2 and Erbium doped TiO 2 nanowires (Er: TiO 2 NWs) were
synthesized on respective thin films using e-beam cum glancing angle deposition technique …

A capacitive memory effect has been reported for Ag nanoparticles (NPs) sheltered In 2 O 3
nanowires (NWs) devices. To compare the performance with that of bare In 2 O 3 NWs, two …

Ultraviolet photodetectors based on sol–gel synthesized Mg 0.18 Zn 0.82 O nanoparticles
have been constructed. The device exhibits a maximum responsivity of 0.27 A/W at 13 V …

The boosted photosensing performances have been reported for Indium (In) nanoparticles
(NPs) capped TiO 2 nanowire (NW) array using Glancing angle deposition (GLAD) …

Abstract Undoped and Erbium-doped TiO 2 thin films (Er: TiO 2 TFs) were fabricated on the
n-type Si substrate using physical vapour deposition technique. Field emission scanning …

GeO 2 thin film (TF) was fabricated by vapour deposition technique in a two zone horizontal
quartz tube. Field emission-scanning electron microscopy showed the formation of 200 nm …

Indium (In) was doped into TiO2 thin film (TF) using the electron beam evaporation
technique followed by an annealing process. The high resolution X-ray diffraction (HRXRD) …

Abstract Synthesis of Er doped In 2 O 3 thin film (TF) is demonstrated by chemical process.
Crystalline phases of In 2 O 3 diminish with Er do**. The oxygen defect related …