We review the photoluminescence of semiconductor nanostructures in high magnetic fields,
concentrating on the effects of the applied magnetic field on orbital motion (wave function …

Self-organized InAs quantum dashes grown on In 0.53 Ga 0.23 Al 0.24 As∕ In P have been
investigated by chemically sensitive scanning transmission electron microscopy. The …

Structural and electronic properties of the BAs compound and BxGa1− xAs, BxIn1− xAs
alloys are studied using first principles calculations. New results on elastic constants …

Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …

We study experimentally and theoretically polarization-dependent luminescence from an
ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy …

We study in detail self-assembled (In, Ga) As quantum dots grown on GaP substrate from the
structural, theoretical, and optical points of view. Single quantum dot morphology is first …

We present a general theoretical model for the optical differential gain in semiconductor
lasers. The model describes self assembly quantum dots (QDs), self assembly quantum …

We present new results on the simulation of two-dimensional (2D) quantum dot (s)(QDs) In
As∕ In P superlattices, emitting at 1.55 μ m, the optical telecommunication wavelength. QDs …

We describe a detailed model for the dynamical and spectral properties of quantum dash
(quantum wire assembly) lasers. We use a self-consistent semiclassical theory for a …

Photoreflectance (PR) measurements have been performed on In As∕ In 0.53 Ga 0.23 Al
0.24 As quantum dashes (QDashes) molecular-beam epitaxy grown on InP substrate. The …