Surface Modification of a Titanium Carbide MXene Memristor to Enhance Memory Window and Low‐Power Operation
With the demand for low‐power‐operating artificial intelligence systems, bio‐inspired
memristor devices exhibit potential in terms of high‐density memory functions and the …
memristor devices exhibit potential in terms of high‐density memory functions and the …
Promising materials and synthesis methods for resistive switching memory devices: a status review
In recent years, the emergence of memory devices, especially resistive random-access
memories (RRAM), has been a front-runner in many technological applications. This is due …
memories (RRAM), has been a front-runner in many technological applications. This is due …
Sprayed FeWO4 thin film-based memristive device with negative differential resistance effect for non-volatile memory and synaptic learning applications
Resistive switching (RS) memories have attracted great attention as promising solutions to
next-generation non-volatile memories and computing technologies because of their simple …
next-generation non-volatile memories and computing technologies because of their simple …
Y2O3-Based Crossbar Array for Analog and Neuromorphic Computation
Here, we report an implementation of ()-based memristive crossbar array (MCA) out of a total
dimension of () array fabricated by utilizing a dual ion beam sputtering (DIBS) system. The …
dimension of () array fabricated by utilizing a dual ion beam sputtering (DIBS) system. The …
Advancements in 2D layered material memristors: unleashing their potential beyond memory
The scalability of two-dimensional (2D) materials down to a single monolayer offers exciting
prospects for high-speed, energy-efficient, scalable memristors. This review highlights the …
prospects for high-speed, energy-efficient, scalable memristors. This review highlights the …
Energy efficient short-term memory characteristics in Ag/SnOx/TiN RRAM for neuromorphic system
O Kwon, J Shin, D Chung, S Kim - Ceramics International, 2022 - Elsevier
In this work, we demonstrate the short-term memory effects of an Ag/SnO x/TiN memristor
device using the spontaneous reset process for a neuromorphic system. The thickness and …
device using the spontaneous reset process for a neuromorphic system. The thickness and …
Dielectric and bipolar resistive switching properties of Ag doped As–S–Se chalcogenide for non-volatile memory applications
In this study, dielectric and bipolar resistive switching properties of the chalcogenide from
the Ag–As 40 S 30 Se 30 system were investigated for potential application in non-volatile …
the Ag–As 40 S 30 Se 30 system were investigated for potential application in non-volatile …
Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect
Q **a, Y Qin, P Qiu - Advanced Electronic Materials, 2022 - Wiley Online Library
Memristor, processing data storage, and logic operation all‐in‐one, is expected to create a
new era of neuromorphic computing and digital logic. Here, this work demonstrates a …
new era of neuromorphic computing and digital logic. Here, this work demonstrates a …
Exploring statistical approaches for accessing the reliability of Y2O3-based memristive devices
Memristive devices have emerged as promising alternatives to traditional complementary
metal-oxide semiconductor (CMOS)-based circuits in the field of neuromorphic systems …
metal-oxide semiconductor (CMOS)-based circuits in the field of neuromorphic systems …
Inverted spike-rate-dependent plasticity due to charge traps in a metal-oxide memristive device
MA Mishchenko, DI Bolshakov… - Journal of Physics D …, 2022 - iopscience.iop.org
We develop a model of Au/Ta/ZrO 2 (Y)/Ta 2 O 5/TiN/Ti memristive devices and
demonstrate, both experimentally and numerically, an inverted spike-rate-dependent …
demonstrate, both experimentally and numerically, an inverted spike-rate-dependent …