Perovskite semiconductors for ionizing radiation detection

H Hu, G Niu, Z Zheng, L Xu, L Liu, J Tang - EcoMat, 2022 - Wiley Online Library
The detection of ionizing radiation such as X‐ray, γ‐ray, α‐particle, and neutrons has been
widely required in medical and industrial areas. Perovskite semiconductor detectors are …

Silicon carbide detectors for sub-GeV dark matter

SM Griffin, Y Hochberg, K Inzani, N Kurinsky, T Lin… - Physical Review D, 2021 - APS
We propose the use of silicon carbide (SiC) for direct detection of sub-GeV dark matter. SiC
has properties similar to both silicon and diamond but has two key advantages:(i) it is a polar …

Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices

KC Mandal, JW Klep**er, SK Chaudhuri - Micromachines, 2020 - mdpi.com
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for
harsh environment application have been studied extensively and reviewed in this article …

Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z1/2 and EH6/7 deep defects

SK Chaudhuri, JW Klep**er… - Journal of Applied Physics, 2020 - pubs.aip.org
Recent advances in the development of thick 4H-SiC epitaxial layers for the fabrication of
surface barrier radiation detectors have been paving the way for their use in highly …
JW Klep**er, SK Chaudhuri, OF Karadavut… - Journal of Crystal …, 2022 - Elsevier
Low doped n-type 4H-SiC epitaxial layers of thickness 50, 150, and 250 µm grown by hot
wall chemical vapor deposition were used to fabricate Ni/4H-SiC Schottky radiation …

Improved performance of SiC radiation detector based on metal–insulator–semiconductor structures

Y Jia, Y Shen, X Sun, Z Shi, K Jiang, T Wu… - Nuclear Instruments and …, 2021 - Elsevier
SiC is a typical wide bandgap semiconductor that has demonstrated potential applications in
radiation detection and imaging, but its performance must be improved from both a material …

Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

KC Mandal, PG Muzykov, J Russell Terry - Applied Physics Letters, 2012 - pubs.aip.org
Schottky diodes on n-type 4H-SiC epitaxial layers have been fabricated for low-energy x-ray
detection. The detectors were highly sensitive to soft x-rays and showed improved response …

Spectroscopic performance studies of 4H-SiC detectors for fusion alpha-particle diagnostics

PV Raja, J Akhtar, CVS Rao, S Vala, M Abhangi… - Nuclear Instruments and …, 2017 - Elsevier
The spectroscopic performances of Schottky barrier diodes (SBDs) and bulk detectors
fabricated on n-type epitaxial 4H-SiC and high-purity semi-insulating (HPSI) 4H-SiC …