Extreme ultraviolet lithography (EUVL) has been demonstrated to meet the industrial
requirements of new-generation semiconductor fabrication. The development of high-power …

The article provides a review of the current state of affairs in the field of physics and
technology of multilayer beryllium-containing mirrors intended for projection lithography and …

A prospective move to 10.5 and 11.2 nm wavelengths, as an alternative to 6.7 and 13.5 nm,
for next generation nanolithography is discussed. Ten-mirror optical systems based on …

The fact that nanoparticles and nanomaterials have fundamental properties different both
from their constituent atoms or molecules and from their bulk counterparts has stimulated …

We optimized the parameters of a laser-produced plasma source based on a solid-state Nd:
YAG laser (λ= 1.06 nm, pulse duration 4 ns, energy per pulse up to 500 mJ, repetition rate …

Problems in the application of a null lens for surface shape measurements of aspherical
mirrors are discussed using the example of manufacturing an aspherical concave mirror for …

Xe laser-produced plasma with a gas-jet target is considered a promising λ= 11.2-nm
radiation source for a possible extension of the EUV (Extreme UltraViolet) lithography. EUV …

In this work, a 10 Hz laser-plasma extreme ultraviolet (EUV) source built for surface
processing of polymers is presented. The source is based on a double-stream gas puff …

Short illumination wavelength allows an extension of the diffraction limit toward nanometer
scale; thus, improving spatial resolution in optical systems. Soft X-ray (SXR) radiation, from …

We present the results of investigations of extreme ultraviolet (EUV) light emission in the
range from 5 to 10 nm. The light source was a pulsed “double-stream” Xe: He gas jet target …