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Fabrication and characteristics of excellent current spreading GaN-based LED by using transparent electrode-insulator-semiconductor structure
C Qi, Y Huang, T Zhan, Q Wang, X Yi… - Journal of …, 2017 - iopscience.iop.org
GaN-based vertical light-emitting-diodes (V-LEDs) with an improved current injection pattern
were fabricated and a novel current injection pattern of LEDs which consists of electrode …
were fabricated and a novel current injection pattern of LEDs which consists of electrode …
A novel surface treatment for the sliver ohmic contacts to P-GaN
C Qi, Q Wang, L Wang, Z Liu, X Yi, J Li… - 2016 13th China …, 2016 - ieeexplore.ieee.org
With the development of the GaN-based light-emitting diodes (LEDs), the need for p-GaN
contacts with low resistivity, good thermal stability, and high reflectivity has become more …
contacts with low resistivity, good thermal stability, and high reflectivity has become more …
p 型 GaN 上 Pd/NiO/Al/Ni 反射电极欧姆接触的热稳定性研究
左秉鑫， 曾昭烩， **祈昕， **叶林， 刘宁炀… - Semiconductor …, 2020 - opticsjournal.net
摘要研究了p 型GaN 上Pd/NiO/Al/Ni 反射电极欧姆接触的比接触电阻率, 热稳定性,
以及光学反射率. 与传统Pd/Al/Ni 电极相比, Pd/NiO/Al/Ni 电极的欧姆接触在氮气环境中经300℃ …
以及光学反射率. 与传统Pd/Al/Ni 电极相比, Pd/NiO/Al/Ni 电极的欧姆接触在氮气环境中经300℃ …
Efficient dual metal contact formation for a semiconductor device
JC Tang, C Flynn - US Patent 9,590,157, 2017 - Google Patents
(57) ABSTRACT A method of forming contacts to an n-type layer and a p-type layer of a
semiconductor device includes depositing a dielectric layer on the n-type layer and the p …
semiconductor device includes depositing a dielectric layer on the n-type layer and the p …