Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can
possibly replace the traditional MOSFET from current IC technology. It has gained much …

In this paper, the bipolar nature of tunnel field effect transistor (TFET) has been utilized for
the first time for the identification of biomolecules. Charge plasma concept has been …

Scaling of conventional MOSFET is hindered by the fact that the subthreshold swing cannot
be reduced less than 60 mV/decade. Tunnel FET (TFET) is a promising candidate to replace …

To overcome the problem of fabrication complexity and to reducei the cost of microelectronic
devices, a new concept of dual-material control gate with dual-oxide tunnel field-effect …

This paper investigates the impact of different interface trap charges (ITCs) on dual-material
gate-oxide-stack double-gate TFET (DMGOSDG-TFET) by introducing localized charges …

The promising candidate for designing a highly sensitive biosensor is the tunneling field
effect transistor (TFET). In this work, for the first time the performance analysis of a cavity on …

This study investigates a junctionless tunnel field-effect transistor with a dual material gate
and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the …

In this paper, we investigate the effect of low K dielectric pocket on DC and analog/RF
performance in dual material stack gate oxide double gate tunnel field effect transistor. For …

In this paper, we investigate for the first time effect of positive (donor) and negative
(acceptor) interface trap charges on the performance of proposed heterogeneous gate …

In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator
(SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC …