Electronic properties of graphene-based bilayer systems

AV Rozhkov, AO Sboychakov, AL Rakhmanov, F Nori - Physics Reports, 2016‏ - Elsevier
This article reviews the theoretical and experimental work related to the electronic properties
of bilayer graphene systems. Three types of bilayer stackings are discussed: the AA, AB, and …

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

S Kanungo, G Ahmad, P Sahatiya… - npj 2D Materials and …, 2022‏ - nature.com
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …

Preparations, properties and applications of graphene in functional devices: A concise review

S Ren, P Rong, Q Yu - Ceramics International, 2018‏ - Elsevier
The present review focuses on the preparations, properties and applications of graphene
materials in a few selected functional devices. We have summarized the mechanical …

[HTML][HTML] Synthesis and emerging properties of 2D layered III–VI metal chalcogenides

H Cai, Y Gu, YC Lin, Y Yu, DB Geohegan… - Applied Physics …, 2019‏ - pubs.aip.org
Atomically thin layered III–VI metal chalcogenides are an emerging class of 2D materials
that have attracted increasing attention in recent years due to their remarkable physical …

Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene

E Icking, L Banszerus, F Wörtche… - Advanced Electronic …, 2022‏ - Wiley Online Library
The importance of controlling both the charge carrier density and the band gap of a
semiconductor cannot be overstated, as it opens the doors to a wide range of applications …

Tunnel field-effect transistors for sensitive terahertz detection

I Gayduchenko, SG Xu, G Alymov, M Moskotin… - Nature …, 2021‏ - nature.com
The rectification of electromagnetic waves to direct currents is a crucial process for energy
harvesting, beyond-5G wireless communications, ultra-fast science, and observational …

Proximity Effects in Bilayer Graphene on Monolayer : Field-Effect Spin Valley Locking, Spin-Orbit Valve, and Spin Transistor

M Gmitra, J Fabian - Physical review letters, 2017‏ - APS
Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe 2 are
investigated from first principles. We find that the built-in electric field induces an orbital band …

Extremely flat band in bilayer graphene

D Marchenko, DV Evtushinsky, E Golias… - Science …, 2018‏ - science.org
We propose a novel mechanism of flat band formation based on the relative biasing of only
one sublattice against other sublattices in a honeycomb lattice bilayer. The mechanism …

Transport across twist angle domains in moiré graphene

B Padhi, A Tiwari, T Neupert, S Ryu - Physical Review Research, 2020‏ - APS
Many experiments in twisted bilayer graphene (TBG) differ from each other in terms of the
details of their phase diagrams. Few controllable aspects aside, this discrepancy is largely …

Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions

DA Mylnikov, EI Titova, MA Kashchenko, IV Safonov… - Nano Letters, 2022‏ - ACS Publications
Photoconductivity of novel materials is the key property of interest for design of
photodetectors, optical modulators, and switches. Despite the photoconductivity of most …