The field of microelectromechanical systems (MEMS) for photonic integrated circuits (PICs)
is reviewed. This field leverages mechanics at the nanometer to micrometer scale to improve …

Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …

To develop a new generation of high-speed photonic modulators on silicon-technology-
based photonics, new materials with large Pockels coefficients have been transferred to …

Tunnel field-effect transistors (TFETs) rely on quantum-mechanical tunnelling and, unlike
conventional metal–oxide–semiconductor field-effect transistors (MOSFETs), require less …

Barium titanate (BaTiO3) has become an attractive material to extend the functionalities of
the silicon photonics platform because of its large Pockels coefficient of more than 1000 …

Integrated ferroelectric plasmonic modulators featuring large bandwidths, broad optical
operation range, resilience to high temperature and ultracompact footprint are introduced …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …

III-V materials, such as InGaAs and InP, are highly attractive for high-performance
electronics and optoelectronics owning to their high carrier mobilities and potential for …

We report on the first demonstration of the CMOS-compatible integration of high-quality
InGaAs on insulator (InGaAs-OI) on Si substrates by a novel concept named Confined …