Compact model for short-channel junctionless accumulation mode double gate MOSFETs
T Holtij, M Graef, FM Hain, A Kloes… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
A 2-D closed form, analytical compact model for long-and short-channel junctionless
accumulation mode double gate MOSFETs is presented. The physics-based 2-D model for …
accumulation mode double gate MOSFETs is presented. The physics-based 2-D model for …
Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET
In this study, an analytical model for surface potential and threshold voltage for undoped (or
lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated …
lightly) doped tri-gate Fin Field Effect Transistor (TG-FinFET) is proposed and validated …
[HTML][HTML] A surface potential model for tri-gate metal oxide semiconductor field effect transistor: analysis below 10 nm channel length
In this study, an analytical model of Tri-gate metal-oxide-semiconductor field effect transistor
(TGMOSFET) for short channel lengths below 10 nm is suggested and Technology computer …
(TGMOSFET) for short channel lengths below 10 nm is suggested and Technology computer …
Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs
A simple threshold voltage model of an undoped symmetrical double-gate MOSFET has
been developed, based on an analytical solution of Poisson's equation for the potential …
been developed, based on an analytical solution of Poisson's equation for the potential …
Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect
A compact Lambert W function-based model is proposed to analyze the drain current of
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
three different fin-shaped Trigate (TG) FinFETs, namely rectangular (RE_TG), trapezoidal …
Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs
A simple analytical expression of the 3-D potential distribution along the channel of lightly
doped silicon trigate MOSFETs in weak inversion is derived, based on a perimeter-weighted …
doped silicon trigate MOSFETs in weak inversion is derived, based on a perimeter-weighted …
A charge-plasma-based transistor with induced graded channel for enhanced analog performance
C Shan, Y Wang, MT Bao - IEEE Transactions on electron …, 2016 - ieeexplore.ieee.org
In this paper, using the charge-plasma concept, we propose an effective technique to
implement a graded channel (GC) nanoscale MOSFET without the need for a separate …
implement a graded channel (GC) nanoscale MOSFET without the need for a separate …
Analytical model of center potential in GaN vertical junctionless power Fin-MOSFETs for fast device-design optimization
In this work, we present an analytical model for fast optimization of gallium nitride vertical
junctionless (VJ) power Fin-MOSFET device design. The derived model faithfully captures …
junctionless (VJ) power Fin-MOSFET device design. The derived model faithfully captures …
Electrical performance optimization of nanoscale double-gate MOSFETs using multiobjective genetic algorithms
In this paper, a new multiobjective genetic algorithm (MOGA)-based approach is proposed
to optimize the electrical performance of double-gate (DG) MOSFETs for nanoscale CMOS …
to optimize the electrical performance of double-gate (DG) MOSFETs for nanoscale CMOS …
Universal potential model in tied and separated double-gate MOSFETs with consideration of symmetric and asymmetric structure
A universal compact potential model for all types of double-gate MOSFETs is presented. An
analytical closed-form solution to a 2D Poisson's equation is obtained with the …
analytical closed-form solution to a 2D Poisson's equation is obtained with the …