TaO x -based resistive switching memories: prospective and challenges
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash
in the future. Although different switching materials have been reported; however, low …
in the future. Although different switching materials have been reported; however, low …
One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications—a review
Remarkable progress has been made in the field of one-dimensional semiconductor
nanostructures for electronic and photonic devices. Group-IV semiconductors and their …
nanostructures for electronic and photonic devices. Group-IV semiconductors and their …
Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing
Optically stimulated synaptic devices are critical to the development of neuromorphic
computing with broad bandwidth and efficient interconnect. Although a few interesting …
computing with broad bandwidth and efficient interconnect. Although a few interesting …
[HTML][HTML] Quantum confinement in Si and Ge nanostructures: Theory and experiment
The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …
Tunable Direct Bandgap Optical Transitions in MoS2 Nanocrystals for Photonic Devices
Highly luminescent MoS2 nanocrystals (NCs) with controlled size distribution have been
achieved using a simple yet inexpensive and impurity free sono-chemical exfoliation method …
achieved using a simple yet inexpensive and impurity free sono-chemical exfoliation method …
High‐performance electrofluorochromic devices based on electrochromism and photoluminescence‐active novel poly (4‐cyanotriphenylamine)
JH Wu, GS Liou - Advanced Functional Materials, 2014 - Wiley Online Library
A novel electrochromism (EC) and photoluminescence (PL)‐active poly (4‐
cyanotriphenylamine)(CN‐PTPA) is prepared by oxidative coupling polymerization from 4 …
cyanotriphenylamine)(CN‐PTPA) is prepared by oxidative coupling polymerization from 4 …
Physical principles and current status of emerging non-volatile solid state memories
Today the influence of non-volatile solid-state memories on persons' lives has become more
prominent because of their non-volatility, low data latency, and high robustness. As a …
prominent because of their non-volatility, low data latency, and high robustness. As a …
Variability Improvement of TiOx/Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric Material
Variability control over the resistive switching process is one of the key requirements to
improve the performance stability of the resistive random access memory (RRAM) devices …
improve the performance stability of the resistive random access memory (RRAM) devices …
SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared
Abstract Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy
band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous …
band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous …
Understanding of multi-level resistive switching mechanism in GeOx through redox reaction in H2O2/sarcosine prostate cancer biomarker detection
Formation-free multi-level resistive switching characteristics by using 10 nm-thick
polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching …
polycrystalline GeOx film in a simple W/GeOx/W structure and understanding of switching …