Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
Amorphous oxide semiconductors have drawn considerable attention as a replacement for
ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and …
ubiquitous silicon based technologies. By virtue of their flexible substrate compatibility and …
A review on the recent advancements in tin oxide-based thin-film transistors for large-area electronics
Amorphous oxide semiconductors have gained significant attention in the past few decades
and have emerged as a promising material for thin-film transistors (TFTs) because they offer …
and have emerged as a promising material for thin-film transistors (TFTs) because they offer …
High-performance thin-film transistor with atomic layer deposition (ALD)-derived indium–gallium oxide channel for back-end-of-line compatible transistor applications …
In this paper, the feasibility of an indium–gallium oxide (In2 (1-x) Ga2 x O y) film through
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …
combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end …
Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation
Miniaturization and energy consumption by computational systems remain major challenges
to address. Optoelectronics based synaptic and light sensing provide an exciting platform for …
to address. Optoelectronics based synaptic and light sensing provide an exciting platform for …
Atomic layer deposition of an indium gallium oxide thin film for thin-film transistor applications
Indium gallium oxide (IGO) thin films were deposited via atomic layer deposition (ALD) using
[1, 1, 1-trimethyl-N-(trimethylsilyl) silanaminato] indium (InCA-1) and trimethylgallium (TMGa) …
[1, 1, 1-trimethyl-N-(trimethylsilyl) silanaminato] indium (InCA-1) and trimethylgallium (TMGa) …
Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element do**
The effect of do** with three different group IV metal cations, specifically Ti4+, Zr4+, and
Hf4+, on the stability of amorphous indium–zinc-oxide (InZnO) thin-film transistors (TFTs) …
Hf4+, on the stability of amorphous indium–zinc-oxide (InZnO) thin-film transistors (TFTs) …
Significant performance and stability improvement of low-voltage InZnO thin-film transistors by slight La do**
Low-voltage, solution-processed oxide thin-film transistors (TFTs) have shown great
potential in next-generation low-power, printable electronics. However, it is now still quite …
potential in next-generation low-power, printable electronics. However, it is now still quite …
Atomic layer deposition process-enabled carrier mobility boosting in field-effect transistors through a nanoscale ZnO/IGO heterojunction
Low-temperature (≤ 400° C), stackable oxide semiconductors are promising as an upper
transistor ingredient for monolithic three-dimensional integration. The atomic layer …
transistor ingredient for monolithic three-dimensional integration. The atomic layer …
Atomically Thin Antimony‐Doped Indium Oxide Nanosheets for Optoelectronics
Wide bandgap semiconducting oxides are emerging as potential 2D materials for
transparent electronics and optoelectronics. This fuels the quest for discovering new 2D …
transparent electronics and optoelectronics. This fuels the quest for discovering new 2D …
Effects of al precursors on the characteristics of indium–aluminum oxide semiconductor grown by plasma-enhanced atomic layer deposition
S Lee, M Kim, G Mun, J Ko, HI Yeom… - … Applied Materials & …, 2021 - ACS Publications
Atomic layer deposition (ALD) has attracted much attention, particularly for applications in
nanoelectronics because of its atomic-level controllability and high-quality products. In this …
nanoelectronics because of its atomic-level controllability and high-quality products. In this …