Recently polyoxometalate (POM) compounds have attracted attentions in optoelectronic
fields. They can be used as an interlayer between metals and semiconductors to improve …

Schottky type photodiodes have gained great interest due to their fast response to light.
Various materials have been used to improve their efficiency behaviors as interlayers or …

In this study, lithium fluoride (LiF) was deposited as an interface layer between metal and p-
type silicon (p-Si) wafer by thermal evaporation and, thus, the Cr/LiF/p-Si/Al Schottky type …

We employed hematoxylin as interfacial layer between the n-and p-type silicon substrate
and cobalt (Co) metallic contact to obtain and compare Co/hematoxylin/n-Si and …

In this study, CuO thin films are grown by spin coating method as a function of La do** on
n-Si substrates. The morphological properties of thin films have been analyzed by AFM …

Aniline blue (AB) thin film layers were deposited on p-Si and glass substrates by spin
coating technique to investigate measurements and layer coating homogeneity effect on the …

In this study, we investigated the effect of different reducing agents (ascorbic acid and
sodium boron hydride) on optoelectronic properties of TiO2: Cu2O nanocomposites. The …

Efforts have been increased to create efficient photodiodes using a variety of interface layers
such as organics, insulators, polymers, and metal oxides. Therefore, in this study, novel 4, 5 …

Derived from the traditional dichalcogenide CuS structure, ternary transition metal
chalcogenide nanoparticles in the form of CuCo 5 S 8 are investigated under the aim of …

A novel Al/CrO 3/p-Si structure was built by help the spin coating technique. CrO 3 thin layer
has been characterized by the XRD, UV–vis, SEM and AFM measurements. It has been …