Critical review of Ohmic and Schottky contacts to β-Ga2O3
LAM Lyle - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
A review of gallium oxide-based power Schottky barrier diodes
Abstract Gallium oxide (Ga 2 O 3) is a representative of ultra-wide bandgap semiconductors,
with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent …
with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent …
[HTML][HTML] β-Gallium oxide power electronics
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
[HTML][HTML] Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a
growth rate of∼ 1 µm/h with control of the silicon do** concentration from 5× 1016 to 1019 …
growth rate of∼ 1 µm/h with control of the silicon do** concentration from 5× 1016 to 1019 …
Controlled Si do** of β-Ga2O3 by molecular beam epitaxy
JP McCandless, V Protasenko, BW Morell… - Applied Physics …, 2022 - pubs.aip.org
We report controlled silicon do** of Ga 2 O 3 grown in plasma-assisted molecular beam
epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier …
epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier …
[HTML][HTML] Atomic scale mechanism of β to γ phase transformation in gallium oxide
We report the detailed mechanism behind the β to γ phase transformation in Sn-doped and
Si-implanted Ga 2 O 3 that we determined based on the direct observation of the atomic …
Si-implanted Ga 2 O 3 that we determined based on the direct observation of the atomic …
[HTML][HTML] Suitability of binary oxides for molecular-beam epitaxy source materials: A comprehensive thermodynamic analysis
We have conducted a comprehensive thermodynamic analysis of the volatility of 128 binary
oxides to evaluate their suitability as source materials for oxide molecular-beam epitaxy …
oxides to evaluate their suitability as source materials for oxide molecular-beam epitaxy …