Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

The main purpose of this book is to provide a comprehensive treatment of the materials
aspects of group-IV, III− V and II− VI semiconductor alloys used in various electronic and …

We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

ABSTRACT Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact,
and energy-efficient power-electronics devices. Their wider band gaps result in higher …

Band-structure engineering is an important strategy that can improve the properties of
functional materials or even bring new features to existing systems. Band gap (or energy …

Linear transverse magnetoresistance is commonly observed in many material systems
including semimetals, narrow band-gap semiconductors, multi-layer graphene and …

We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …

We report p-type conductivity in nominally undoped GaAs 1–x Bi x epilayers for a wide
range of Bi-concentrations (0.6%≤ x≤ 10.6%). The counterintuitive increase of the …

GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy
with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band …

We use scanning tunneling spectroscopy to show directly that the conduction band density
of states (DOS) of GaAs 1− x N x with low nitrogen (N) content x is enhanced about 0.5 eV …