Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

AgNbO3 exhibits “peculiar” anti-/ferroelectricity and narrow bandgap semi-conductivity that
lead to active responses to different types of external stimuli, including electric fields, light …

Ferroelectric domain walls are a completely new type of functional interface, which have the
potential to revolutionize nanotechnology. In addition to the emergent phenomena at …

Polar domain walls are currently at the focus of intensive research owing to their unusual
and highly localized functional properties, which bear great potential for technological …

Ferroelectric materials exhibit anomalous behavior due to the presence of domains and
domain walls which are related to the spontaneous polarization inherent in the crystal …

For next-generation technology, magnetic systems are of interest due to the natural ability to
store information and, through spin transport, propagate this information for logic functions …

Probing of the free surface ferroelectric properties of thin polar films can be achieved either
by estimating the band bending variance under the top-most layer or by studying the extent …

We report two methods for direct observations of avalanches in ferroelectric materials during
the motion of domain walls. In the first method, we use optical imaging techniques to derive …

Very sensitive responses to external forces are found near phase transitions. However,
transition dynamics and preequilibrium phenomena are difficult to detect and control. We …

Frustration hinders ideal local interactions in systems ranging from artificial spin ices with ice
rules to mechanical metamaterials featuring regular floppy modes. While geometric …