The gate-all-around (GAA) nanosheet (NS) field-effect-transistor (FET) is poised to replace
FinFET in the 3 nm CMOS technology node and beyond, marking the second seminal shift in …

Hot carrier injection (HCI) can generate interface traps or oxide traps mainly by dissociating
the Si-H or Si-O bond, thus affecting device performances such as threshold voltage and …

In this work, we present time-zero variability and degradation data obtained from a large set
of on-chip devices in specifically designed arrays, from room temperature to 4K. We show …

Even after more than 50 years of development, a major issue in silicon-based technology is
the understanding of the Si/SiO 2 interface and its defects, particularly the unsaturated …

The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …

In this article, the dynamic variability induced by hot carrier degradation (HCD) in FinFETs is
studied with decomposing the variation contributions of multiple types of traps. The …

Forksheet (FS) FETs are a novel transistor architecture consisting of vertically stacked nFET
and pFET sheets at opposite sides of a dielectric wall. The wall allows reducing the p-to …

With the technological scaling of metal–oxide–semiconductor field-effect transistors
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …

We perform a comprehensive analysis of hot-carrier degradation (HCD) in FinFETs. To
accomplish this goal we employ our physics-based HCD model and validate it against …

A compact hot-carrier degradation (HCD) time kinetics model is proposed for conventional,
lightly doped drain, and drain extended MOSFETs and FinFETs. It can predict measured …