Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry
S Shokhovets, R Goldhahn, G Gobsch… - Journal of Applied …, 2003 - pubs.aip.org
We demonstrate that variable angle spectroscopic ellipsometry (SE) is capable of
determining both ordinary and extraordinary dielectric functions (DFs) in the transparent …
determining both ordinary and extraordinary dielectric functions (DFs) in the transparent …
Enhanced Pockels effect in AlN microring resonator modulators based on AlGaN/AlN multiple quantum wells
AlN-on-sapphire is a promising integrated photonic platform for operation over a wide
wavelength range from ultraviolet to infrared. However, this platform suffers from a weak …
wavelength range from ultraviolet to infrared. However, this platform suffers from a weak …
Modelling aluminium nitride's refractive indices under various situations for optical simulations: a mixed research
Recently, optical simulation has attracted more attention in different thin film applications.
Each layer's thickness and refractive index are the most essential simulation parameters …
Each layer's thickness and refractive index are the most essential simulation parameters …
AlGaN/AlN heterostructures: an emerging platform for integrated photonics
We introduce a novel material for integrated photonics and investigate aluminum gallium
nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for develo** …
nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for develo** …
Optical nonlinear and electro‐optical coefficients in bulk aluminium nitride single crystals
Bulk aluminium nitride single crystals grown by physical vapour transport were
characterised for their nonlinear optical properties. The two independent nonzero optical …
characterised for their nonlinear optical properties. The two independent nonzero optical …
Doubly resonant metal-free electro-optic microwave receiver in aluminum nitride
This paper demonstrates a passive, integrated electro-optic receiver for detection of free-
space microwave radiation. Unlike a traditional microwave receiver, which relies on …
space microwave radiation. Unlike a traditional microwave receiver, which relies on …
Room temperature synthesis of thin films by nitrogen-ion-assisted pulsed laser deposition
ZM Ren, YF Lu, HQ Ni, TYF Liew, BA Cheong… - Journal of Applied …, 2000 - pubs.aip.org
Cubic aluminum nitride (c-AlN) thin films have been deposited at room temperature on
silicon substrates by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target …
silicon substrates by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target …
Structural properties of AlN films grown on Si, Ru/Si and ZnO/Si substrates
WT Lim, BK Son, DH Kang, CH Lee - Thin Solid Films, 2001 - Elsevier
The structural properties of rf-sputtered AlN films grown on Si, Ru/Si, and ZnO/Si substrates
were investigated. From the X-ray diffraction analysis, the crystallite size, biaxial stress and …
were investigated. From the X-ray diffraction analysis, the crystallite size, biaxial stress and …
Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters
In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron
sputtering. The obtained film was studied for thermoluminescence after irradiating it to …
sputtering. The obtained film was studied for thermoluminescence after irradiating it to …
Blue second harmonic generation from aluminum nitride films deposited onto silicon by sputtering technique
We studied the second order optical nonlinearity of aluminum nitride films grown by
sputtering onto silicon substrates. The crystalline properties of the films were investigated by …
sputtering onto silicon substrates. The crystalline properties of the films were investigated by …