Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry

S Shokhovets, R Goldhahn, G Gobsch… - Journal of Applied …, 2003 - pubs.aip.org
We demonstrate that variable angle spectroscopic ellipsometry (SE) is capable of
determining both ordinary and extraordinary dielectric functions (DFs) in the transparent …

Enhanced Pockels effect in AlN microring resonator modulators based on AlGaN/AlN multiple quantum wells

WJ Shin, P Wang, Y Sun, S Paul, J Liu, M Kira… - ACS …, 2022 - ACS Publications
AlN-on-sapphire is a promising integrated photonic platform for operation over a wide
wavelength range from ultraviolet to infrared. However, this platform suffers from a weak …

Modelling aluminium nitride's refractive indices under various situations for optical simulations: a mixed research

ZA Zaky, M Al-Dossari, MAM Hussien… - Optical and Quantum …, 2024 - Springer
Recently, optical simulation has attracted more attention in different thin film applications.
Each layer's thickness and refractive index are the most essential simulation parameters …

AlGaN/AlN heterostructures: an emerging platform for integrated photonics

S Gündoğdu, S Pazzagli, T Pregnolato, T Kolbe… - npj …, 2025 - nature.com
We introduce a novel material for integrated photonics and investigate aluminum gallium
nitride (AlGaN) on aluminum nitride (AlN) templates as a platform for develo** …

Optical nonlinear and electro‐optical coefficients in bulk aluminium nitride single crystals

A Majkić, A Franke, R Kirste, R Schlesser… - … status solidi (b), 2017 - Wiley Online Library
Bulk aluminium nitride single crystals grown by physical vapour transport were
characterised for their nonlinear optical properties. The two independent nonzero optical …

Doubly resonant metal-free electro-optic microwave receiver in aluminum nitride

ST Lipkowitz, WP Berk, KE Grutter, TE Murphy - Optica, 2024 - opg.optica.org
This paper demonstrates a passive, integrated electro-optic receiver for detection of free-
space microwave radiation. Unlike a traditional microwave receiver, which relies on …

Room temperature synthesis of thin films by nitrogen-ion-assisted pulsed laser deposition

ZM Ren, YF Lu, HQ Ni, TYF Liew, BA Cheong… - Journal of Applied …, 2000 - pubs.aip.org
Cubic aluminum nitride (c-AlN) thin films have been deposited at room temperature on
silicon substrates by nitrogen-ion-assisted pulsed laser ablation of a hexagonal AlN target …

Structural properties of AlN films grown on Si, Ru/Si and ZnO/Si substrates

WT Lim, BK Son, DH Kang, CH Lee - Thin Solid Films, 2001 - Elsevier
The structural properties of rf-sputtered AlN films grown on Si, Ru/Si, and ZnO/Si substrates
were investigated. From the X-ray diffraction analysis, the crystallite size, biaxial stress and …

Synthesis of aluminum nitride thin films and their potential applications in solid state thermoluminescence dosimeters

RK Choudhary, A Soni, P Mishra, DR Mishra… - Journal of …, 2014 - Elsevier
In this work, aluminum nitride thin films were deposited on Si (1 1 1) substrate by magnetron
sputtering. The obtained film was studied for thermoluminescence after irradiating it to …

Blue second harmonic generation from aluminum nitride films deposited onto silicon by sputtering technique

MC Larciprete, A Bosco, A Belardini, R Li Voti… - Journal of applied …, 2006 - pubs.aip.org
We studied the second order optical nonlinearity of aluminum nitride films grown by
sputtering onto silicon substrates. The crystalline properties of the films were investigated by …