Digital alloy and random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44 avalanche photodiodes
(APDs) exhibit low excess noise, comparable to Si APDs. Consequently, this material is a …

A systematic study of impact ionization, avalanche multiplication, and excess noise in InAs
diodes has been carried out, confirming that avalanche multiplication is dominated by the …

The electron and hole avalanche multiplication characteristics have been measured in bulk
AlAs 0.56 Sb 0.44 pin and nip homojunction diodes, lattice matched to InP, with nominal …

Measurements of the avalanche multiplication noise in InAs pin and nip diodes at room
temperature demonstrate unambiguously that the avalanche multiplication process is …

InGaAs Avalanche Photodiodes for Ranging and Lidar discusses the materials, physics, and
design considerations of avalanche photodiodes (APDs) developed for 3D imaging sensors …

The breakdown probabilities of avalanche photodiodes (APDs) working in the Geiger mode
are analyzed using a history-dependent analytical impact-ionization model [RJ McIntyre …

Measurement and analysis of the temperature dependence of avalanche gain and excess
noise in InAs electron avalanche photodiodes (eAPDs) at 77 to 250 K are reported. The …

Extended shortwave infrared (eSWIR) detectors capable of detecting wavelengths between
1.7 and 2.7 µm are useful for a wide range of applications, such as remote sensing and …

Electron and hole multiplication characteristics, M/sub e/and M/sub h/, have been measured
in Al/sub x/Ga/sub 1-x/As (x= 0-0.60) homojunction p/sup+/-in/sup+/diodes with i-region …

Al_0. 85Ga_0. 15As_0. 56Sb_0. 44 is a promising avalanche material for near infrared
avalanche photodiodes (APDs) because they exhibit very low excess noise factors …