Single PbS colloidal quantum dot transistors

K Shibata, M Yoshida, K Hirakawa, T Otsuka… - Nature …, 2023 - nature.com
Colloidal quantum dots are sub-10 nm semiconductors treated with liquid processes,
rendering them attractive candidates for single-electron transistors operating at high …

Advances in modeling of noisy quantum computers: Spin qubits in semiconductor quantum dots

D Costa, M Simoni, G Piccinini, M Graziano - IEEE Access, 2023 - ieeexplore.ieee.org
The new quantum era is expected to have an unprecedented social impact, enabling the
research of tomorrow in several pivotal fields. These perspectives require a physical system …

Simulation of charge stability diagrams for automated tuning solutions (simcats)

F Hader, S Fleitmann, J Vogelbruch… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
Quantum dots (QDs) must be tuned precisely to provide a suitable basis for quantum
computation. A scalable platform for quantum computing can only be achieved by fully …

Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations

I Kriekouki, F Beaudoin, P Philippopoulos, C Zhou… - Solid-State …, 2023 - Elsevier
Single electrons trapped in quantum dots hosted in silicon nanostructures are a promising
platform for the implementation of quantum technologies. In this study, we investigated the …

Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device

P Philippopoulos, F Beaudoin, P Galy - Solid-State Electronics, 2024 - Elsevier
In this study, 3D simulations are introduced to analyze electric-dipole spin resonance
(EDSR) for a spin qubit defined in a 28 nm-node Ultra-Thin Body and Buried oxide (UTBB) …

Industrial approach to quantum dots in fully-depleted silicon-on-insulator devices for quantum information applications

I Kriekouki - 2022 - theses.hal.science
Electron spin qubits based on quantum dots implemented using advanced Complementary
Metal-Oxide-Semiconductor (CMOS) technology functional at cryogenic temperatures …

Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices

I Kriekouki, P Philippopoulos, F Beaudoin, S Mir… - Solid-State …, 2023 - Elsevier
The spin of an electron confined to a semiconductor quantum dot is one of the main
technology platforms currently evaluated in the pursuit of qubit implementation. In this study …

Heavy Hole vs. Light Hole Spin Qubits: A Strain-Driven Study of SiGe/Ge and GeSn/Ge

K Dsouza, P Del Vecchio, N Rotaru… - arxiv preprint arxiv …, 2024 - arxiv.org
This work investigates and compares the impact of strain on heavy hole (HH) spin qubits in
SiGe/Ge and light hole (LH) spin qubits in GeSn/Ge heterostructures, focusing on energy …

Atomistic first-principles modeling of single donor spin-qubit

S Jia, F Beaudoin, P Philippopoulos, H Guo - Applied Physics Letters, 2024 - pubs.aip.org
Using an impurity atom in crystal silicon as a spin-1/2 qubit has been made experimentally
possible recently where the impurity atom acts as a quantum dot (QD). Quantum transport in …

Common-Mode Control and Confinement Inversion of Electrostatically Defined Quantum Dots in a Commercial CMOS Process

A Sokolov, X Wu, C Power, M Asker… - arxiv preprint arxiv …, 2024 - arxiv.org
Confining electrons or holes in quantum dots formed in the channel of industry-standard fully
depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit …