Gallium nitride nanorods were prepared through a carbon nanotube–confined reaction.
Ga2O vapor was reacted with NH3 gas in the presence of carbon nanotubes to form wurtzite …

This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films
and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A …

An analytical bond-order potential for GaN is presented that describes a wide range of
structural properties of GaN as well as bonding and structure of the pure constituents. For …

Advances in nanofabrication, characterization tools, and the drive to commercialize
nanotechnology products have contributed to the significant increase in research on …

We demonstrate bulk synthesis of highly crystalline β-gallium oxide tubes, nanowires, and
nanopaintbrushes using molten gallium and microwave plasma containing a mixture of …

Electronics, such as printed circuit board (PCB), transistor, radio frequency identification
(RFID), organic light emitting diode (OLED), solar cells, electronic display, lab on a chip …

Liquid metal (LM) electronic ink (e‐ink) is a promising new‐generation material for printed
electronics. Extended from this ideal platform, such ink can be post‐processed or loaded …

A simple and high-yield method involving vapor-liquid-solid wire-like growth mechanism
was developed for the synthesis of GaN nanowires. In this process, the mixture of Ga and …

The standard enthalpy of formation of InN at 298 K has been determined using high-
temperature oxidative drop solution calorimetry in a molten sodium molybdate solvent at 975 …

III-nitride materials have been linked with a vast number of exciting applications from power
electronics to solar cells. Herein, polycrystalline InN, GaN and systematically controlled …