Investigation of radiation hardened TFET SRAM cell for mitigation of single event upset
This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel
field effect transistor (DG TFET). The mitigation technique for the data recovery after the …
field effect transistor (DG TFET). The mitigation technique for the data recovery after the …
Soft-Error-Aware Radiation-Hardened Ge-DLTFET-Based SRAM Cell Design
In this paper, a soft-error-aware radiation-hardened 6T SRAM cell has been implemented
using germanium-based do**less tunnel FET (Ge DLTFET). In a circuit level simulation …
using germanium-based do**less tunnel FET (Ge DLTFET). In a circuit level simulation …