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Enhancement-mode III-nitride devices
RK Lal - US Patent 9,087,718, 2015 - Google Patents
7,795,642 B2 9/2010 Suh et al. JP 2008-199771 8, 2008 7,851,825 B2 12/2010 Suh et al.
JP 2010-087076 4/2010 7,875,907 B2 1/2011 Honea et al. JP 2010-539712 12/2010 …
JP 2010-087076 4/2010 7,875,907 B2 1/2011 Honea et al. JP 2010-539712 12/2010 …
Cascode structures with GaN cap layers
S Sriram - US Patent 9,755,059, 2017 - Google Patents
(57) ABSTRACT A transistor device including a cap layer is described. One embodiment of
such a device includes cap layer between a gate and a semiconductor layer. In one …
such a device includes cap layer between a gate and a semiconductor layer. In one …
Recessed field plate transistor structures
S Sriram, T Alcorn, F Radulescu, S Sheppard - US Patent 9,847,411, 2017 - Google Patents
(57) ABSTRACT A transistor device including a field plate is described. One embodiment of
such a device includes a field plate separated from a semiconductor layer by a thin spacer …
such a device includes a field plate separated from a semiconductor layer by a thin spacer …
Wide bandgap field effect transistors with source connected field plates
8, 193, 562 B2 6/2012 Suh et al...................... 257/194 8, 502, 323 B2 8/2013 Chen....
257/392 8, 823, 057 B2 9/2014 Sheppard et al............ 257/192 8, 901, 604 B2 12/2014 …
257/392 8, 823, 057 B2 9/2014 Sheppard et al............ 257/192 8, 901, 604 B2 12/2014 …
Semiconductor device and method for producing the same, power supply device, and high-frequency amplifier
S Ozaki, N Okamoto - US Patent 9,755,061, 2017 - Google Patents
(57) ABSTRACT A semiconductor device includes: a nitride semiconductor multilayer; an
insulating film disposed on the nitride semi conductor multilayer; and a gate electrode …
insulating film disposed on the nitride semi conductor multilayer; and a gate electrode …
Semiconductor device having improved heat dissipation
AP Ritenour - US Patent 9,147,632, 2015 - Google Patents
A semiconductor device having improved heat dissipation is disclosed. The semiconductor
device includes a semi-insulating substrate and epitaxial layers disposed on the semi …
device includes a semi-insulating substrate and epitaxial layers disposed on the semi …
Cascode structures for GaN HEMTs
S Sriram, T Alcorn, F Radulescu, S Sheppard - US Patent 9,679,981, 2017 - Google Patents
(57) ABSTRACT A multi-stage transistor device is described. One embodi ment of Such a
device is a dual-gate transistor, where the second stage gate is separated from a barrier …
device is a dual-gate transistor, where the second stage gate is separated from a barrier …
Enhancement-mode III-nitride devices
RK Lal - US Patent 9,590,060, 2017 - Google Patents
AIII-N enhancement-mode transistor includes a III-Nstruc ture including a conductive
channel, Source and drain con tacts, and a gate electrode between the source and drain …
channel, Source and drain con tacts, and a gate electrode between the source and drain …
High voltage field effect transistor finger terminations
5,028,879 A 7/1991 Kim 6,724.252 B2 4/2004 Ngo et al. 5,046,155. A 9/1991 Beyer et al.
6,727,762 B1 4/2004 Kobayashi 5,047,355. A 9/1991 Huber et al. 6,748.204 B1 6/2004 …
6,727,762 B1 4/2004 Kobayashi 5,047,355. A 9/1991 Huber et al. 6,748.204 B1 6/2004 …
Enhancement-mode III-nitride devices
RK Lal - US Patent 10,043,898, 2018 - Google Patents
A III-N enhancement-mode transistor includes a III-N struc ture including a conductive
channel, source and drain con tacts, and a gate electrode between the source and drain …
channel, source and drain con tacts, and a gate electrode between the source and drain …