Gallium nitride–based photodiode: a review
Abstract This paper shows Gallium Nitride material based photodiode as an overview to use
it with different layer thickness in order to detect multi-spectral ranges and to obtain high …
it with different layer thickness in order to detect multi-spectral ranges and to obtain high …
HgCdTe avalanche photodiodes: A review
A Singh, V Srivastav, R Pal - Optics & Laser Technology, 2011 - Elsevier
This paper presents a comprehensive review of fundamental issues, device architectures,
technology development and applications of HgCdTe based avalanche photodiodes (APD) …
technology development and applications of HgCdTe based avalanche photodiodes (APD) …
Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition
In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition
(PLD) was demonstrated. The porous silicon was prepared using laser-assisted …
(PLD) was demonstrated. The porous silicon was prepared using laser-assisted …
An AlGaN/GaN dual channel triangular microcantilever based UV detector
The UV detection capabilities of III-nitride dual channel triangular microcantilevers,
consisting of AlGaN/GaN two-dimensional electron gas channels with an intervening GaN …
consisting of AlGaN/GaN two-dimensional electron gas channels with an intervening GaN …
Wafer-scale high sensitive UV photodetectors based on novel AlGaN/n-GaN/p-GaN heterostructure HEMT
W Wu, C Liu, L Han, X Wang, J Li - Applied Surface Science, 2023 - Elsevier
We report a novel high sensitive ultraviolet (UV) photodetector based on AlGaN/n-GaN/p-
GaN heterostructure high electron mobility transistor (HEMT) on sapphire substrates and …
GaN heterostructure high electron mobility transistor (HEMT) on sapphire substrates and …
Light-triggered 2D electron gas in a GaN-based HEMT with sandwiched p-GaN layers
Y Wang, C Liu, H Qian, H Liu, L Han, X Wang, W Gao… - Optics Letters, 2023 - opg.optica.org
In this work, a pn junction-coupled metal-insulator-semiconductor (MIS) normally-off high-
electron-mobility transistor (HEMT) UVPD is proposed. A two-dimensional electron gas …
electron-mobility transistor (HEMT) UVPD is proposed. A two-dimensional electron gas …
UV detector based on InAlN/GaN-on-Si HEMT stack with photo-to-dark current ratio> 107
We demonstrate an InAlN/GaN-on-Si high electron mobility transistor based UV detector
with a photo-to-dark current ratio of> 10 7. The Ti/Al/Ni/Au metal stack was evaporated and …
with a photo-to-dark current ratio of> 10 7. The Ti/Al/Ni/Au metal stack was evaporated and …
An ultra-sensitive AlGaN/AlN/GaN/AlGaN photodetector: proposal and investigation
In this paper, an AlGaN/AlN/GaN/AlGaN photodetector high electron mobility transistor is
designed and simulated. The proposed structure incorporates an AlN spacer layer between …
designed and simulated. The proposed structure incorporates an AlN spacer layer between …
Al0.18Ga0.82N/GaN Two-Dimensional Electron Gas-Based Ultraviolet Photodetectors With Symmetrical Interdigitated Structure
Y Gu, F **e, Q Fan, X Jiang, J Guo, Z **e… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The fabrication and comprehensive characterizations of Al Ga/GaN two-dimensional
electron gas (2DEG)-based ultraviolet (UV) photodetector (PD) with symmetrical …
electron gas (2DEG)-based ultraviolet (UV) photodetector (PD) with symmetrical …
Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers
A set of N-polar InN epilayers has been grown at different temperatures by plasma–assisted
molecular beam epitaxy (PA-MBE) on GaN/AlN/Al 2 O 3 (0001) templates. The purpose is to …
molecular beam epitaxy (PA-MBE) on GaN/AlN/Al 2 O 3 (0001) templates. The purpose is to …