Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics
Epitaxial InAs-based nanowire (NW) arrays have recently gained attention as promising
materials for infrared optoelectronics. To shift the spectral sensitivity of NW-based …
materials for infrared optoelectronics. To shift the spectral sensitivity of NW-based …
Discontinuities and bands alignments of strain-balanced III-VN/III-V-Bi heterojunctions for mid-infrared photodetectors
We have developed a 10-and 14-band anticrossing (BAC) models to investigate the band
structures of dilute nitrides and dilute bismides alloys. In fact, the addition of Bi or N to III-V …
structures of dilute nitrides and dilute bismides alloys. In fact, the addition of Bi or N to III-V …
Structural and optical properties of dilute InAsN grown by molecular beam epitaxy
We perform a structural and optical characterization of InAs 1− x N x epilayers grown by
molecular beam epitaxy on InAs substrates (x≲ 2.2%). High-resolution x-ray diffraction …
molecular beam epitaxy on InAs substrates (x≲ 2.2%). High-resolution x-ray diffraction …
Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys
Photoreflectance spectroscopy has been applied to study the energy gap and the spin-orbit
splitting in InNAs alloys with the nitrogen concentration changing from 0% to 0.88%. It has …
splitting in InNAs alloys with the nitrogen concentration changing from 0% to 0.88%. It has …
Molecular beam epitaxial growth of InAsN: Sb for midinfrared Optoelectronics
We report molecular beam epitaxial growth and characterization of dilute nitride InAsN: Sb.
X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis …
X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis …
Effect of low nitrogen concentrations on the electronic properties of
We report cyclotron resonance (CR), transverse magnetoresistance (MR), and Hall effect
studies of a series of n-type InAs 1− x N x epilayers grown on GaAs with x up to 1%. The well …
studies of a series of n-type InAs 1− x N x epilayers grown on GaAs with x up to 1%. The well …
Development of dilute nitride materials for mid-infrared diode lasers
A Krier, M De la Mare, PJ Carrington… - Semiconductor …, 2012 - iopscience.iop.org
The development of dilute nitride alloys for use in mid-infrared diode lasers operating in the
3–4 µm spectral range is described. The dilute nitrides are found to offer improved …
3–4 µm spectral range is described. The dilute nitrides are found to offer improved …
Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth
We report on the comparative studies of photoluminescence (PL) properties of molecular
beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the …
beam epitaxy grown dilute InAsN epilayers with and without antimony (Sb) flux during the …
N incorporation in GaInNSb alloys and lattice matching to GaSb
The incorporation of N into MBE grown GaNSb and GaInNSb is investigated. Measurements
of the N fraction in GaNSb show the familiar linear dependence on inverse growth rate …
of the N fraction in GaNSb show the familiar linear dependence on inverse growth rate …