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Gate-all-around charge plasma-based dual material gate-stack nanowire FET for enhanced analog performance
In this paper, a gate-all-around (GAA) charge plasma-based do**less dual material gate
nanowire FET is proposed (CP-DM). This structure is further explored by adding gate-stack …
nanowire FET is proposed (CP-DM). This structure is further explored by adding gate-stack …
Impact of gate material engineering (GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless …
Abstract In this paper Gate Material Engineered (GME) Gate-Stack (GS) silicon nanowire
Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack …
Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack …
Ge0. 83Sn0. 17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality
Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur
passivation on gate stack quality | Journal of Applied Physics | AIP Publishing Skip to Main …
passivation on gate stack quality | Journal of Applied Physics | AIP Publishing Skip to Main …
Noise distortion analysis of the designed heterodielectric dual-material gate do**less nanowire FET
The do**less nanowire (NW) field-effect transistor (FET) has been discovered as a
remedy to low drive current problems of junctionless NWFET. To complete the state-of-the …
remedy to low drive current problems of junctionless NWFET. To complete the state-of-the …
A do**less gate-all-around (GAA) gate-stacked nanowire FET with reduced parametric fluctuation effects
This paper proposes a gate-all-around silicon nanowire do**less field-effect transistor
(FET), utilizing a gate-stacked technique. The source and drain regions are formed by …
(FET), utilizing a gate-stacked technique. The source and drain regions are formed by …
Leakage current of germanium-on-insulator-based junctionless nanowire transistors
C Sun, R Liang, L Liu, J Wang, J Xu - Applied Physics Letters, 2015 - pubs.aip.org
Junctionless nanowire transistors (JNTs) have been fabricated on ultra-thin-body
germanium-on-insulator (GOI) substrates using a simple Si-compatible top-down process …
germanium-on-insulator (GOI) substrates using a simple Si-compatible top-down process …
Effect of temperature on the performance of triple-gate junctionless transistors
The device transport parameters (subthreshold slope, low-field mobility, series resistance,
and threshold voltage) of n-channel triple-gate junctionless transistors are investigated in …
and threshold voltage) of n-channel triple-gate junctionless transistors are investigated in …
Investigation of self-heating effect on ballistic transport characterization for Si FinFETs featuring ultrafast pulsed IV technique
In this paper, we investigate the carrier transport characteristics of the ultrascaled Si
FinFETs. Traditional dc characterization technique is compared with the ultrafast pulsed IV …
FinFETs. Traditional dc characterization technique is compared with the ultrafast pulsed IV …
Body-tied germanium tri-gate junctionless PMOSFET with in-situ boron doped channel
CW Chen, CT Chung, JY Tzeng… - IEEE electron device …, 2013 - ieeexplore.ieee.org
In this paper, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs
directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion …
directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion …
Impact of dopant variations on junctionless cylindrical nanowire FETs
A Chattopadhyay, A Pathak… - 2020 IEEE VLSI DEVICE …, 2020 - ieeexplore.ieee.org
This paper presents the effects of variations in do** profile of a junctionless silicon
nanowire FET. 3-D simulations are performed using Silvaco TCAD for analyzing the …
nanowire FET. 3-D simulations are performed using Silvaco TCAD for analyzing the …