Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Ohmic contacts to Gallium Nitride materials
In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕ Al∕ Mo∕ Au Ohmic contacts on n-GaN and AlGaN∕ GaN epilayers
Ti∕ Al-based multilayer metallizations are usually used interchangeably for n-Ga N and Al
Ga N∕ Ga N epilayers. Our investigations show that, although excellent Ohmic …
Ga N∕ Ga N epilayers. Our investigations show that, although excellent Ohmic …
Progress of GaN-based E-mode HEMTs
H Huang, Y Lei, N Sun - Journal of Physics D: Applied Physics, 2024 - iopscience.iop.org
With the continuous improvement of the power density and operating frequency in power
conversion systems, it is necessary to develop the new power electronic products with better …
conversion systems, it is necessary to develop the new power electronic products with better …
Ohmic contacts to Al‐rich AlGaN heterostructures
EA Douglas, S Reza, C Sanchez… - … status solidi (a), 2017 - Wiley Online Library
Due to the ultra‐wide bandgap of Al‐rich AlGaN, up to 5.8 eV for the structures in this study,
obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative …
obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative …
Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
In this letter, we have reported a novel metal scheme Ti/Au/Al/Ni/Au for ohmic contact on
AlGaN/GaN high-electron-mobility transistors. The reported metal scheme is observed to …
AlGaN/GaN high-electron-mobility transistors. The reported metal scheme is observed to …
A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs
YK Lin, J Bergsten, H Leong, A Malmros… - Semiconductor …, 2018 - iopscience.iop.org
Deeply recessed ohmic contacts for GaN-based high electron mobility transistors (HEMTs)
are demonstrated. It is shown that low-resistance ohmic contacts can be achieved with …
are demonstrated. It is shown that low-resistance ohmic contacts can be achieved with …
A machine learning-assisted model for GaN ohmic contacts regarding the fabrication processes
Z Wang, L Li, Y Yao - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
Gallium nitride (GaN) devices have been successfully commercialized due to their superior
performance, especially their high-power transformation efficiency. To further reduce the …
performance, especially their high-power transformation efficiency. To further reduce the …
Formation mechanism of Ohmic contacts on AlGaN∕ GaN heterostructure: Electrical and microstructural characterizations
The electrical characteristics and interfacial reactions of Ti∕ Al∕ Mo∕ Au metallization on
Al Ga N∕ Ga N heterostructures at various annealing temperatures ranging from 400 to 950 …
Al Ga N∕ Ga N heterostructures at various annealing temperatures ranging from 400 to 950 …
Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications
Low-resistance ohmic contacts in AlGaN/GaN high-electron-mobility transistor (HEMT)
devices require high-temperature (HT) annealing (> 800° C) which can deteriorate material …
devices require high-temperature (HT) annealing (> 800° C) which can deteriorate material …