FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …

Abstract Tri-Gate (TG) FinFETs are the most reliable option to get into deeply scaled gate
lengths. This paper analyses an optimized 5 nm gate length (LG) n-channel TG Junctionless …

This paper represents the analytical modeling of split-gate Dielectric Modulated Junction
Less Transistor (JLT) for label free electrical detection of bio molecules. Some part of the …

In this paper, for the first time, we have investigated the DC and analog/RF performance
metrics of 3 nm gate length (LG) silicon-on-insulator (SOI) FinFET using Hf x Ti 1− x O 2 high …

In this paper, we have studied the impact of various dielectric single-k (Sk) and dual-k (Dk)
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …

Zinc oxide (ZnO) nanostructures are widely used in various fields of science and technology
due to their properties and ease of fabrication. To achieve the desired characteristics for …

In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon
nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed …

With inherent structural simplicity due to the omission of ultrasteep pn junctions, the
conventional junctionless FET can be used as a barrier-controlled device with low OFF …

Physics-based analytical model is proposed in this paper which analyzes the effect of
temperature, channel length and silicon film radius on gate-induced drain leakages (GIDL) …

In this paper, we present a double gate JL-TFET based biosensor by varying the gate
dielectric constant to detect various biomolecules through label-free detection technique. An …