Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
Development and characterization of photovoltaic tandem-junction nanowires using electron-beam-induced current measurements
L Hrachowina, E Barrigón, MT Borgström - Nano Research, 2022 - Springer
Nanowires have many interesting properties that are of advantage for solar cells, such as
the epitaxial combination of lattice-mismatched materials without plastic deformation. This …
the epitaxial combination of lattice-mismatched materials without plastic deformation. This …
Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
Axial p–n and p–i–n junctions in GaAs 0.7 P 0.3 nanowires are demonstrated and analyzed
using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays …
using electron beam induced current microscopy. Organized self-catalyzed nanowire arrays …
Investigation of the effect of the do** order in GaN nanowire p–n junctions grown by molecular-beam epitaxy
We analyse the electrical and optical properties of single GaN nanowire p–n junctions
grown by plasma‐assisted molecular-beam epitaxy using magnesium and silicon as do** …
grown by plasma‐assisted molecular-beam epitaxy using magnesium and silicon as do** …
Wafer-scale synthesis and optical characterization of InP nanowire arrays for solar cells
Nanowire solar cells have the potential to reach the same efficiencies as the world-record III–
V solar cells while using a fraction of the material. For solar energy harvesting, large-area …
V solar cells while using a fraction of the material. For solar energy harvesting, large-area …
Analysis of Nanowire pn-Junction with Combined Current–Voltage, Electron-Beam-Induced Current, Cathodoluminescence, and Electron Holography …
We present the characterization of a pn-junction GaAs nanowire. For the characterization,
current–voltage, electron-beam-induced current, cathodoluminescence, and electron …
current–voltage, electron-beam-induced current, cathodoluminescence, and electron …
In situ passivation of Ga x In (1− x) P nanowires using radial Al y In (1− y) P shells grown by MOVPE
Abstract Ga x In (1− x) P nanowires with suitable bandgap (1.35–2.26 eV) ranging from the
visible to near-infrared wavelength have great potential in optoelectronic applications. Due …
visible to near-infrared wavelength have great potential in optoelectronic applications. Due …
Modeling of the electron beam induced current signal in nanowires with an axial pn junction
A Lahreche, AV Babichev, Y Beggah… - …, 2022 - iopscience.iop.org
A tridimensional mathematical model to calculate the electron beam induced current (EBIC)
of an axial pn nanowire junction is proposed. The effect of the electron beam and junction …
of an axial pn nanowire junction is proposed. The effect of the electron beam and junction …
Growth and Characterization of Tandem-Junction Photovoltaic Nanowires
L Hrachowina - 2022 - portal.research.lu.se
In order to satisfy the growing energy needs of our planet's population, and at the same time
mitigate global warming, sustainable energy sources such as solar energy are …
mitigate global warming, sustainable energy sources such as solar energy are …
Geometric effects on carrier collection in core–shell nanowire p–n junctions
We report electron-beam-induced current (EBIC) microscopy carried out on free-standing
GaAs nanowire core–shell, p–n tunnel junctions. The carrier kinetics in both the n-type core …
GaAs nanowire core–shell, p–n tunnel junctions. The carrier kinetics in both the n-type core …