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On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes
Z Wang, F Huang, C Chu, Y Zhang… - Japanese Journal of …, 2023 - iopscience.iop.org
In this work, by using numerical TCAD simulations, we have systematically studied the
impact of different field plates (FPs) on the electrical characteristics for lateral AlGaN/GaN …
impact of different field plates (FPs) on the electrical characteristics for lateral AlGaN/GaN …
Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes
B Wang - 2024 - vtechworks.lib.vt.edu
Abstract Gallium Oxide (Ga2O3) is an ultra-wide bandgap semiconductor with a bandgap of
4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium …
4.5–4.9 eV, which is larger than that of Silicon (Si), Silicon Carbide (SiC), and Gallium …