A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Although graphene has met many of its initially predicted optoelectronic, thermal, and
mechanical properties, photodetectors with large spectral bandwidths and extremely high …

Graphene has attracted much attention for the realization of high-speed photodetection for
silicon photonics over a wide wavelength range. However, the reported fast graphene …

(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved
the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber …

Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …

High-detectivity and low-cost short-wave infrared photodetectors with complementary metal–
oxide–semiconductor (CMOS) compatibility are attractive for various applications such as …

Expanding the optical communication band is one of the most effective methods of
overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn …

Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …