A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Although graphene has met many of its initially predicted optoelectronic, thermal, and
mechanical properties, photodetectors with large spectral bandwidths and extremely high …

Graphene has attracted much attention for the realization of high-speed photodetection for
silicon photonics over a wide wavelength range. However, the reported fast graphene …

(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved
the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber …

In the era of big data, the growing demand for data transmission capacity requires the
communication band to expand from the traditional optical communication windows (∼ 1.3 …

Integrated silicon nanophotonics has rapidly established itself as intriguing research field,
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …

We report the demonstration of a normal-incidence pin germanium-tin (Ge_0. 951Sn_0.
049) photodetector on silicon-on-insulator substrate for 2 μm wavelength application. The …

Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …