Redox‐based resistive switching memories (ReRAMs): Electrochemical systems at the atomic scale

I Valov - ChemElectroChem, 2014 - Wiley Online Library
Resistive switching memories (RRAMs) are an emerging research field, which is currently of
focused interest for both the interdisciplinary scientific community and industry. RRAMs are …

Radiofrequency switches based on emerging resistive memory technologies-a survey

N Wainstein, G Adam, E Yalon… - Proceedings of the …, 2020 - ieeexplore.ieee.org
High-performance radio frequency (RF) switches play a critical role in allowing radio
transceivers to provide access to shared resources such as antennas. They are important …

Memristive architectures exploiting self-compliance multilevel implementation on 1 kb crossbar arrays for online and offline learning neuromorphic applications

S Kim, H Ji, K Park, H So, H Kim, S Kim, WY Choi - ACS nano, 2024 - ACS Publications
This paper suggests the practical implications of utilizing a high-density crossbar array with
self-compliance (SC) at the conductive filament (CF) formation stage. By limiting the …

Future of dynamic random-access memory as main memory

SK Kim, M Popovici - MRS Bulletin, 2018 - cambridge.org
Dynamic random-access memory (DRAM) is the main memory in most current computers.
The excellent scalability of DRAM has significantly contributed to the development of …

Voltage divider effect for the improvement of variability and endurance of TaOx memristor

KM Kim, JJ Yang, JP Strachan, EM Grafals, N Ge… - Scientific reports, 2016 - nature.com
The impact of a series resistor (RS) on the variability and endurance performance of
memristor was studied in the TaOx memristive system. A dynamic voltage divider between …

Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability

T Swoboda, X Gao, CMM Rosário, F Hui… - ACS Applied …, 2023 - ACS Publications
Resistive random access memories (RRAM), based on the formation and rupture of
conductive nanoscale filaments, have attracted increased attention for application in …

Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon

C Hu, MD McDaniel, A Posadas, AA Demkov… - Nano …, 2014 - ACS Publications
TiO2 is being widely explored as an active resistive switching (RS) material for resistive
random access memory. We report a detailed analysis of the RS characteristics of single …

A journey towards reliability improvement of TiO2 based resistive random access memory: a review

D Acharyya, A Hazra, P Bhattacharyya - Microelectronics reliability, 2014 - Elsevier
Abstract A Resistive Random Access Memory (RRAM), where the memory performance
principally originated from 'resistive'change rather than 'capacitive'one (the case with …

Nanoscale interface engineering for solid oxide fuel cells using atomic layer deposition

J Seo, S Kim, SH Jeon, S Kim, JH Kim… - Nanoscale …, 2022 - pubs.rsc.org
Atomic layer deposition (ALD), which is already actively used in the semiconductor industry,
has been in the spotlight in various energy fields, such as batteries and fuel cells, given its …

Insight into the Degradation Mechanisms of Atomic Layer Deposited TiO2 as Photoanode Protective Layer

C Ros, NM Carretero, J David, J Arbiol… - … applied materials & …, 2019 - ACS Publications
Around 100 nm thick TiO2 layers deposited by atomic layer deposition (ALD) have been
investigated as anticorrosion protective films for silicon-based photoanodes decorated with …