Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …

Resistive switching memories (RRAMs) are an emerging research field, which is currently of
focused interest for both the interdisciplinary scientific community and industry. RRAMs are …

This paper suggests the practical implications of utilizing a high-density crossbar array with
self-compliance (SC) at the conductive filament (CF) formation stage. By limiting the …

Dynamic random-access memory (DRAM) is the main memory in most current computers.
The excellent scalability of DRAM has significantly contributed to the development of …

The impact of a series resistor (RS) on the variability and endurance performance of
memristor was studied in the TaOx memristive system. A dynamic voltage divider between …

TiO2 is being widely explored as an active resistive switching (RS) material for resistive
random access memory. We report a detailed analysis of the RS characteristics of single …

Abstract A Resistive Random Access Memory (RRAM), where the memory performance
principally originated from 'resistive'change rather than 'capacitive'one (the case with …

High-performance radio frequency (RF) switches play a critical role in allowing radio
transceivers to provide access to shared resources such as antennas. They are important …

Although laminate structures are widely used in electrostatic capacitors, unavoidable
heterogeneous interfaces often deteriorate the dielectric properties by impeding film …

Capacitor structures utilized in modern dynamic random access memory (DRAM) cells
require the conformal growth of high-k films on electrode materials. In this context, the atomic …