Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application

Z Shen, C Zhao, Y Qi, W Xu, Y Liu, IZ Mitrovic, L Yang… - Nanomaterials, 2020 - mdpi.com
Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

ReRAM: History, status, and future

Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …

A flexible laser-induced graphene memristor with volatile switching for neuromorphic applications

MD Ganeriwala, R Motos Espada… - … Applied Materials & …, 2024 - ACS Publications
Two-dimensional graphene and graphene-based materials are attracting increasing interest
in neuromorphic computing applications by the implementation of memristive architectures …

Memristive non-volatile memory based on graphene materials

Z Shen, C Zhao, Y Qi, IZ Mitrovic, L Yang, J Wen… - Micromachines, 2020 - mdpi.com
Resistive random access memory (RRAM), which is considered as one of the most
promising next-generation non-volatile memory (NVM) devices and a representative of …

Low voltage resistive memory devices based on graphene oxide–iron oxide hybrid

JR Rani, SI Oh, JM Woo, JH Jang - Carbon, 2015 - Elsevier
Low cost resistive switching memory devices using graphene oxide–iron oxide (GF) hybrid
thin films, sandwiched between platinum (Pt) and indium-tin-oxide (ITO) electrodes, were …

Research on Residual Gas Adsorption on Surface of Hexagonal Boron Nitride-Based Memristor

C Ding, Y Chen, J Yang, S Lu, Y Dai - ACS omega, 2024 - ACS Publications
As a promising nonvolatile memory device with two ends, the memristor has received
extensive attention for its industrial manufacture. Density functional theory was used to …

Highly reliable resistive switching without an initial forming operation by defect engineering

S Lee, D Lee, J Woo, E Cha, J Park… - IEEE electron device …, 2013 - ieeexplore.ieee.org
The effects of stack and defect engineering of metal-oxide layers on resistive switching
uniformity were investigated to obtain resistive random access memory (ReRAM) with …

An overview of the switching parameter variation of RRAM

M Zhang, S Long, G Wang, Y Li, X Xu, H Liu… - Chinese science …, 2014 - Springer
Resistive random access memory (RRAM) has been considered as one of the most
promising candidates for next-generation nonvolatile memory, due to its advantages of …

Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

K Lee, I Hwang, S Lee, S Oh, D Lee, CK Kim, Y Nam… - Scientific Reports, 2015 - nature.com
Resistive random access memory (ReRAM) devices have been extensively investigated
resulting in significant enhancement of switching properties. However fluctuations in …

Bidirectional analog conductance modulation for RRAM-based neural networks

Z Jiang, Z Wang, X Zheng, SW Fong… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Increasing computation demand of machine learning (ML) applications (recommender
system, image classification, speech recognition, and so on) calls for the development of …