Analysis of basal plane dislocation motion induced by P+ Ion implantation using synchrotron X-ray topography
Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC
wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room …
wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room …
Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography
A novel high energy implantation system has been successfully developed to fabricate 4H-
SiC superjunction devices for medium and high voltage via implantation of dopant atoms …
SiC superjunction devices for medium and high voltage via implantation of dopant atoms …
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
4H-SiC wafers with 12 µm epilayers were blanket implanted to a depth of 12 µm with 5 x
1016 cm-3 Al ions via Tandem Van de Graaff accelerator located at Brookhaven National …
1016 cm-3 Al ions via Tandem Van de Graaff accelerator located at Brookhaven National …
Analysis of Lattice Damage in Annealed 4H-SiC Epiwafers after Heated Implantation with High Energy Al Ions
Silicon Carbide (SiC) is a semiconductor with a wide bandgap having substantial potential
for power devices. Its characteristics, including wide bandgap, high breakdown voltage, and …
for power devices. Its characteristics, including wide bandgap, high breakdown voltage, and …
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Silicon Carbide (SiC) is a wide bandgap semiconductor with great potential for power
devices with properties such as a wide bandgap, high breakdown voltage, and thermal …
devices with properties such as a wide bandgap, high breakdown voltage, and thermal …